TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1305 RoHS Pb GREEN SP1305 30pF, 30kV TVS Diode Array Description The SP1305 TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SP1305 can absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard without performance degradation and safely dissipate up to 5A of 8/20s induced surge current (IEC nd 61000-4-5, 2 Edition) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low leakage current 30kV contact, 30kV air Moisture Sensitivity Level EFT, IEC 61000-4-4, 50A (MSL-1) (5/50ns) Halogen-Free, Lead-Free 1 Lightning, IEC 61000-4-5 and RoHS-Compliant 2nd Edition, 5A (8/20s) Low clamping voltage 3 2 Applications Industrial equipment Legacy ports (RS-232, RS-485) Test and medical equipment Security and alarm system Point-of-Sale terminals Motor controls Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/18/20 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1305 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 5.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A, Pin1 or Pin2 to Pin3 5 V RWM R Breakdown Voltage V I =1mA, Pin1 or Pin2 to Pin3 6 7 V BR R Reverse Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s, Pin1 or Pin2 to Pin3 8.6 10 V PP p 1 Clamp Voltage V C I =5A, t =8/20s, Pin1 or Pin2 to Pin3 11 13.5 V PP p 2 Dynamic Resistance R TLP, t =100ns, Pin1 or Pin2 to Pin3 0.24 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV Pin1 or Pin2 to Pin3 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Pin1 or Pin2 to Pin3 Reverse Bias=0V, f=1MHz 1 Diode Capacitance C 30 40 pF I/O-GND Pin1 or Pin2 to Pin3 Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias (Pin1 or Pin2 to Pin3) Clamping Voltage vs. Peak Pulse Current 40.0 16.0 14.0 30.0 12.0 10.0 20.0 8.0 6.0 10.0 4.0 2.0 0.0 0.0 0.01.0 2.03.0 4.05.0 1.02.0 3.04.0 5.0 Bias Voltage (V) Peak Pulse Current-I (A) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/18/20 Capacitance (pF) Clamp Voltage-V (V) C