TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1054 SP1312 RoHS Pb GREEN SP1312 11pF 24kV Bidirectional Discrete TVS Description The SP1312 bidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1312 TVS can safely absorb repetitive ESD strikes of 24 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, each TVS can safely dissipate a 3A 8/20 surge nd event as defined in IEC 61000-4-5 2 Edition. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 0201 Flipchip 24kV contact, 30kV air 0.02A(TYP) at 12V EFT, IEC 61000-4-4, 40A Industries smallest ESD (5/50ns) footprint available (01005) 12 Lightning, 3A (8/20 as Halogen free, lead free defined in IEC 61000-4-5 and RoHS compliant Note: Drawing not to scale nd 2 edition) Low capacitance of 11pF ( V =0V) R Functional Block Diagram Applications Mobile Phones Wearable Technology Smart Phones Portable Navigation Components Camcorders 2 1 Tablets Portable Medical Point of Sale Terminals Digital Cameras Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 06/06/18 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SP1054 SP1312 Absolute Maximum Ratings Symbol Parameter Value Units 1 I Peak Current (t =8/20s) 3 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 12 V RWM R Breakdown Voltage V I =1mA 13 15 V BR R Reverse Leakage Current I V =12V 0.02 0.5 A LEAK R I =1A, t =8/20s, Fwd 18.5 22 V PP p 1 Clamp Voltage V C I =3A, t =8/20s, Fwd 22.5 27 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.48 DYN P IEC 61000-4-2 (Contact Discharge) 24 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V 11 14 pF D Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamp voltage vs. I for 8/20s Waveshape Capacitance vs. Reverse Bias PP 12.0 25.0 20.0 9.0 15.0 6.0 10.0 5.0 3.0 0.0 11.5 22.5 3 0.0 0123456789 10 11 12 Peak Pulse Current-I (A) PP Reverse Bias Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 06/06/18 Clamp Voltage-Vc (V) Capacitance (pF)