TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1333 RoHS Pb GREEN SP1333 8pF 30kV Bidirectional Discrete TVS Description The SP1333 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1333 TVS can safely absorb repetitive ESD strikes above the maximum contact discharge level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines. Additionally, the SP1333 offers up to 5A 8/20 surge rating with low clamping voltages. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 30kV contact, 30kV air 1nA (TYP) at 3.3V EFT, IEC 61000-4-4, 40A Space efficient 0201 (5/50ns) 12 Halogen free, Lead free Lightning, 5A (8/20s as and RoHS compliant defined in IEC 61000-4-5 Moisture Sensitivity Level nd 2 edition) (MSL -1) Low capacitance of 8pF AEC-Q101 qualified (TYP V =0V) R Functional Block Diagram Applications Mobile Phones Portable Navigation Components Smart Phones Tablets Portable Medical Small Size Panel MP3/PMP Point of Sale Terminals 2 1 Application Example Keypads I/O Controller P1 P2 P3 IC P4 SP1333-01UTG (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/06/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1333 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 3.3 V RWM R Breakdown Voltage V I =1mA 3.5 4.5 V BR R Reverse Leakage Current I V =3.3V 1 50 nA LEAK R I =1A, t =8/20s, I/O to I/O 5 7 V PP p 1 Clamp Voltage V C I =5A, t =8/20s, I/O to I/O 7.5 9 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.3 DYN P IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V 8 10 pF IO-I/O Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias 8/20s Pulse Waveform 110% 10.0 100% 90% 8.0 80% 70% 6.0 60% 50% 4.0 40% 30% 2.0 20% 10% 0.0 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 01.1 2.23.3 Time (s) Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/06/19 Capacitance (pF) Percent of I PP