TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Surge Protection - SP1555Series RoHS GREEN Pb SP1555 Series 120A for V BUS Description The SP1555 integrates a 15V TVS diode to provide lightning surge protection for the USB V pin up to 120A BUS (t =8/20s) per the IEC61000-4-5 2nd edition standard. The P SP1555 provides superior protection for current intensive applications such as fast charging peripherals. The SP1555 comes in a space saving 2.0x1.8mm DFN package with a typical height of 0.55mm making it an ideal solution for smart phones, tablets, and other portable electronics. Pinout Features ESD, IEC 61000-4-2, Benchmark setting 30kV contact, 30kV air protection EFT, IEC 61000-4-4, 80A High current handling (t =5/50ns) capability for fast charging P applications Surge, IEC 61000-4-5 2nd edition, 120A (t =8/20s) Moisture Sensitivity Level P (MSL-1) Protection for V BUS operating up to 15V Lead-free and RoHS compliant Bottom View Functional Block Diagram Applications Protection for the V circuit on USB2.0 Fast Charging BUS Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2016 Littelfuse, Inc. SP1255P Series Specifications are subject to change without notice. Revision: 09/30/16 GND GND TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Surge Protection - SP1555Series Absolute Maximum Ratings Symbol Parameter Value Units I (Pin 1) Peak Current (t =8/20s) 120 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses at or above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also due to variations in test equipment stresses shown above are averages. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units USB V (Pin 1) BUS Reverse Standoff Voltage V Pin 1 to GND 15 V RWM Reverse Breakdown Voltage V I =1mA, Pin 1 to GND 17.5 18.8 20.1 V BR T Reverse Leakage Current I V =15V, Pin 1 to GND 0.05 1 A LEAK R Forward Voltage V I =10mA, GND to Pin 1 0.6 0.7 1.0 V F F I =30A, t =8/20s, Fwd 21.5 V PP p 1 Clamp Voltage V I =100A, t =8/20s, Fwd 27.5 V C PP p I =120A, t =8/20s, Fwd 29.5 V PP p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 800 pF D Note: 1 Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias (Pin1 to GND) Clamping Voltage vs I PP 800 30.0 700 25.0 600 20.0 500 400 15.0 300 10.0 200 5.0 100 0.0 0 30 40 50 60 70 80 90 100110 120 0369 12 15 Bias Voltage (V) Peak Pulse Current-I (A) PP Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin1 to GND) 100 10 1 0.1 0.11 10 1001000 Pulse Duration tp(s) 2016 Littelfuse, Inc. SP1255P Series Specifications are subject to change without notice. Revision: 09/30/16 Capacitance (pF) Peak Pulse Power -P (kW) pp Clamp Voltage (V ) C SP3012