TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SP2504N Series SP2504N Series 2.5V 20A Diode Array RoHS Pb GREEN Description The SP2504N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and ESD. This robust device can safely absorb up to 20A per IEC 61000-4-5, 2nd edition (t =8/20s) without performance P degradation and a minimum 30kV ESD per IEC 61000-4-2 international standard. The low loading capacitance makes the SP2504N ideal for protecting high-speed signal pins. Features Pinout ESD , IEC 61000-4-2, L ow capacitance of 3.5pF 30kV contact, 30kV air (TYP) per I/O 13 5 EFT, IEC 61000-4-4, 40A L ow leakage current of (tp =5/50ns) 1A (MAX) at 2.5V Lightning , IEC 61000- R oHS compliant and GND 4-5, 2nd edition 20A lead-free (tp =8/20s) 9 7 Applications Functional Block Diagram 10/100/1000 Ethernet VoIP Phones Interfaces Set Top Boxes 97 Customer Premise PBX Systems Equipment (CPE) Surveillance Cameras 5 Application Example *Package is shown as transparent Ethernet PHY RJ-45 Connector Tx+ J1 13 GND Tx- SP2504N Additional Information PHY Rx+ J8 Rx- Samples Resources Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/12/17 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SP2504N Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range 55 to 150 C I Peak Current (t =8/20s) 20.0 A PP p Maximum Junction Temperature 150 C P Peak Pulse Power (t =8/20s) 300 W PK p Maximum Lead Temperature 260 C T Operating Temperature 40 to 125 C OP (Soldering 20-40s) T Storage Temperature 55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 2.5 V RWM Snap Back Voltage V I =50mA 2.0 V SB SB Reverse Leakage Current I V =2.5V, I/O to GND 0.5 1.0 A LEAK R I =1A, t =8/20s, Fwd 5.0 V PP p I =5A, t =8/20s, Fwd 6.3 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Fwd 8.0 V PP p I =20A, t =8/20s, Fwd 11.5 V PP p Dynamic Resistance R (V -V )/(I -I ) 0.35 W DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V 3.5 5.0 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V 2.0 pF I/O-I/O 1. Note: Parameter is guaranteed by design and/or device characterization. Pulse Waveform Clamping Voltage vs. I PP 110% 12.0 100% 10.0 90% 80% 8.0 70% 60% 6.0 50% 4.0 40% 30% 2.0 20% 10% 0.0 0% 0 5 10 15 20 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) Peak Pulse Current-I (A) PP 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/12/17 Percent of I PP Clamp Voltage (V ) C