TVS Diode Array Datasheet SP3012 Series 0.5pF Diode Array for USB3.0 RoHS Pb Description The SP3012 Series integrates 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust devices can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal lines such as USB3.0, HDMI, USB2.0, and eSATA. Features ESD, IEC 61000-4-2, 12kV Small f orm factor DFN contact, 25kV air (JEDEC MO-229) package provides flow through routing Additional Information EFT, IEC 61000-4-4, 40A to simplify PCB layout (tP=5/50ns) AEC-Q101 Qaulified Lightning , IEC 61000-4-5 2nd edition, 4A (tP=8/20s) Halogen free, lead free and RoHS compliant L ow capacitance of 0.5pF (TYP) per I/O Low leakage current of 1.5A Resources Accessories Samples (MAX) at 5V Applications Pinout LCD/PDP TVs Set Top Boxes 8 14 External Storages Smartphones DVD/Blu-ray Players Ultrabooks/Notebooks Desktops Digital Cameras MP3/PMP Automotive Electronics 7 1 SP3012-06UTG (AEC-Q101 Qualied) Application Example for USB3.0 *Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the opposite pin USBPort USBController with the PCB trace. V BUS Functional Block Diagram SSTX+ SSTX - IC SP3012-06UTG SSRX+ SSRX - GND SP3012-06UTG PIN 11 PIN 8 PIN 12 D+ PIN 13 PIN 9 D- PIN 14 SignalGND PIN 10 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 09/22/21TVS Diode Array Datasheet SP3012 Series 0.5pF Diode Array for USB3.0 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 4.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5.0 V RWM R Breakdown Voltage V I = 1mA 6.0 V BR R Reverse Leakage Current I V =5V, Any I/O to GND 1.5 A LEAK R I =1A, t =8/20s, Fwd 6.6 7.9 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 7.0 8.4 V PP p Dynamic Resistance R (V - V ) / (I - I ) 0.4 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 12 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 25 kV 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.5 0.65 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.3 0.4 pF I/O-/O 1 Note: Parameter is guaranteed by design and/or device characterization. Insertion Loss (S21) I/O to GND Capacitance vs. Bias Voltage 1.0 0 -3 0.8 -6 -9 0.6 -12 -15 -18 0.4 -21 -24 0.2 -27 0.0 -30 100 1000 2.03.0 4.05.0 Frequency (MHz) Bias Voltage (V) Clamping Voltage vs. IPP Transmission Line Pulsing(TLP) Plot 15 14 10.0 13 12 8.0 11 10 9 6.0 8 7 6 4.0 5 4 3 2.0 2 1 0.0 0 1234 Current (A) 0 1 2 3 4 5 6 7 8 9 10 11 TLP Voltage (V) 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 09/22/21 Clamp Voltage (V) Capacitance (pF) Attenuation (dB) TLP Current (A)