TVS Diode Array Datasheet SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the international standard IEC 61000-4-2, without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Features & Benefits Lead-Free and RoHS- Low capacitance of 0.35pF Compliant VR=0V (TYP) ESD, IEC 61000-4-2, 20kV L ow leakage current of 100nA Additional Information contact discharge, 30kV air at 5.3V (MAX) discharge Space efficient SOD882 EFT, IEC 61000-4-4, 40A footprint (5/50ns) Extremely low dynamic Lightning, 3A (8/20s per IEC resistance (0.7 TYP) 61000-4-5 2nd Edition) AEC-Q101 qualified Resources Accessories Samples Pinout Applications SOD882 USB 3.0/USB 2.0/MHL External Storage MIPI Camera and Display Ultrabooks, Notebooks 1 2 HDMI 2.0, DisplayPort 1.3, Tablets, eReaders eSATA Automotive Electronics Set Top Boxes, Game Consoles (AEC-Q101 qualified) Smart Phones Functional Block Diagram 2 1 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 04/14/21TVS Diode Array Datasheet SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 20 W PK P I Peak Current (t =8/20s) 3.0 A PP p T Operating Temperature -40 to 125 C OP Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5.3 V RWM R Breakdown Voltage V I =1mA 6.8 7.8 9.1 V BR R Reverse Leakage Current I V =5.3V <10 100 nA LEAK R 1 Clamp Voltage V I =1A, t =8/20s, Fwd 12.0 V C PP p 2 Dynamic Resistance R TLP, tp=100ns, I/O to GND 0.7 DYN IEC 61000-4-2 (Contact) 20 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 0.35 0.5 pF I/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. 8/20 Pulse Waveform Transmission Line Pulsing(TLP) Plot 22 110% 20 100% 18 90% 16 80% 70% 14 60% 12 50% 10 40% 8 30% 6 20% 4 10% 2 0% 0.05.0 10.015.020.025.030.0 0 05 10 15 20 25 30 Time (s) TLP Voltage (V) 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 04/14/21 Percent of I PP TLP Current (A) SP3021