TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3042 Series RoHS Pb GREEN SP3042 Series 0.35pF 30kV Bidirectional Discrete TVS Description The SP3042 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard (30kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Pinout Features 0201 Flipchip ESD protection of 30kV Low capacitance of contact discharge, 0.35pF V =0V (TYP) R 30kV air discharge, (IEC Low leakage current of 61000-4-2) 12 100nA at 5.3V (MAX) EFT, IEC 61000-4-4, 40A Space efficient 01005 (5/50ns) footprint Lightning , IEC 61000- Lead free and RoHS 4-5 2nd edition, 2A compliant (t =8/20s) p Functional Block Diagram Applications USB 3.0/USB 2.0/MHL Smart Phones MIPI Camera and Display External Storage HDMI 2.0, DisplayPort Ultrabooks, Notebooks 2 1.3, eSATA 1 Tablets, eReaders IoT Modules Security Modules Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/17/20 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3042 Series Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 20 W PK P I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V - - - 5.3 V RWM Breakdown Voltage V 1 =1mA - 7.8 V BR R Reverse Leakage Current I V =5.3V - - 100 nA LEAK R 1 Clamp Voltage V I =1A, t =8/20s, Fwd - 12.5 - V C PP p 2 Dynamic Resistance R TLP, tp=100ns, I/O to GND - 0.5 - DYN IEC 61000-4-2 (Contact) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 - - kV 1 Diode Capacitance C Reverse Bias=0V - 0.35 0.5 pF D Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs Reverse Bias 0.5 110% 100% 90% 0.4 80% 70% 0.3 60% 50% 0.2 40% 30% 0.1 20% 10% 0% 0.0 0.05.0 10.015.020.025.030.0 01234 5 Time (s) Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/17/20 Percent of I PP Capacitance (pF) SP3021