TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3118 Series RoHS Pb GREEN SP3118 Series 0.3pF 10 kV Bidirectional Discrete TVS Description The SP3118 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC 61000-4-2 international standard without performance degradation. The back-to- back configuration provides symmetrical ESD protection. Pinout Features ESD protection of 10kV L ow leakage current of contact discharge, 15kV 50nA (max) at 18V 0201 Flipchip air discharge, (IEC 61000- Space efficient 0201 and 4-2) SOD882 footprint 12 EFT protection, Halogen free, Lead free IEC 61000-4-4, 40A and RoHS compliant (tp=5/50ns) Moisture Sensitivity Level SOD882 Lightning, 2A (8/20s as (MSL -1) defined in IEC 61000-4-5 AEC-Q101 qualified nd 2 edition) 1 (SOD882) 2 Low capacitance of 0.3pF V =0V R Functional Block Diagram Applications Tablets MP3/ PMP Ultrabook Set Top Boxes eReader Portable Medical 12 Smart Phones NFC and FeliCa Digital Cameras 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3118 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 18 V RWM Reverse Leakage Current I V =18V 10 50 nA LEAK R I =1A, t =8/20s, Fwd 31 35 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 34 38 V PP p IEC 61000-4-2 (Contact) 10 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 15 kV 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.75 DYN P 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.3 0.45 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20S Pulse Waveform Capacitance vs. Reverse Bias 0.5 110% 100% 90% 0.4 80% 70% 0.3 60% 50% 0.2 40% 30% 20% 0.1 10% 0% 0 0.05.0 10.015.020.025.030.0 0369 12 15 18 Time (s) Bias Voltage (V) Transmission Line Pulsing (TLP) Plot Insertion Loss (S21) 0 20 18 -1 -2 16 -3 14 12 -4 10 -5 8 -6 6 -7 4 -8 2 -9 0 -10 05 10 15 20 25 30 35 40 45 50 55 60 10 1001000 Frequency (MHz) TLP Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/19 Percent of I PP TLP Current (A) Capacitance (pF) Attenuation (dB)