TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3130 Series RoHS GREEN SP3130 Series 0.3pF 10KV Bidirectional Discrete TVS Pb Description The SP3130 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC 61000-4-2 international standard without performance degradation. The back-to back configuration provides symmetrical ESD protection for data lines when AC signals are present. Features Pinout ESD protection of 10kV Low capacitance of 0.3pF 0201 Flipchip contact discharge, 15kV V =0V R air discharge, (IEC 61000- L ow leakage current of 4-2) 12 50nA (max) at 28V EFT protection, Space ef ficient 0201 and IEC 61000-4-4, 40A 0402 footprint (tp=5/50ns) SOD882 Halogen free, Lead free Lightning P rotection, and RoHS compliant nd IEC 61000-4-5 2 edition, AEC-Q101 qualified 1 2 2A (t =8/20s) (SOD882) p Functional Block Diagram Applications Tablets MP3/ PMP Ultrabook Set Top Boxes eReader Portable Medical 12 Smart Phones NFC and FeliCa Digital Cameras 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP3130 Series Absolute Maximum Ratings Thermal Information Symbol Parameter Value Units Parameter Rating Units I Peak Current (t =8/20s) 2.0 A Storage Temperature Range -55 to 150 C PP p Maximum Lead Temperature T Operating Temperature -40 to 125 C OP 260 C (Soldering 20-40s) T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 28 V RWM Reverse Leakage Current I V =28V with 1pin at GND 10 50 nA LEAK R I =1A, t =8/20s, Fwd 39 44 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 42 48 V PP p IEC61000-4-2 (Contact) 10 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 15 kV 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 1.0 DYN P 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.3 0.45 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20S Pulse Waveform Capacitance vs. Reverse Bias 110% 0.5 100% 90% 0.4 80% 70% 0.3 60% 50% 40% 0.2 30% 20% 0.1 10% 0% 0.05.0 10.015.020.025.030.0 0 Time (s) 04 81216202428 Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/19 Percent of I PP Capacitance (pF)