TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Low Capacitance ESD Protection - SP3205 General Purpose ESD Protection - SP1027 RoHS Pb GREEN SP3205 0.3pF 4A Unidirectional Diode Array Description The SP3205 provides low capacitance, unidirectional and a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The typical capacitance of 0.3pF helps ensure excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3.1, HDMI, DisplayPort, Thunderbolt and V-by-One . It can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation and safely dissipate 4A of 8/20s surge current nd (IEC 61000-4-5 2 edition). Pinout Features ESD, IEC 61000-4-2, Low leakage current of 0201 Flipchip 30kV contact, 30kV air 1nA (TYP) at 3.3V Halogen free, lead free EFT, IEC 61000-4-4, 40A and RoHS compliant 12 (5/50ns) Moisture Sensitivity Level Lightning, 4A (8/20s as SOD882 (MSL -1) defined in IEC 61000-4-5 nd 2 edition) AEC-Q101 Qualified Low capacitance of 0.3pF (TYP V =0V) R Functional Block Diagram Applications USB 3.1 S-ATA 1 HDMI NFC DisplayPort 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/13/20 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Low Capacitance ESD Protection - SP3205General Purpose ESD Protection - SP1027SP1333 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 4 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 3.3 V RWM R Breakdown Voltage V I =1mA 3.6 5.5 V BR R Reverse Leakage Current I V =3.3V 1 100 nA LEAK R I =1A, t =8/20s 7.5 9 V PP p 1 Clamp Voltage V C I =4A, t =8/20s 9.5 12 V PP p 2 Dynamic Resistance R TLP, t =100ns 0.3 DYN P IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 0.3 0.5 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping voltage vs. I for 8/20s waveshape PP 2.0 12.0 10.0 1.5 8.0 6.0 1.0 4.0 0.5 2.0 0.0 0.0 1.02.0 3.04.0 0.01.1 2.23.3 Peak Pulse Current-I (A) PP Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/13/20 Capacitance (pF) Clamp Voltage V (V) C