TVS Diode Array Datasheet SP3208 0.08pF 12kV Bidirectional Discrete TVS 7/6/2021 ESU270-63 RoHS Pb GREEN SP3213-01UTG Description The SP3208 is a bidirectional TVS Diode that provides ultra low capacitance and a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The typical capacitance of 0.08pF helps ensure signal integrity on the most challenging consumer electronics interfaces such as USB 3.2, 3.1, HDMI 2.1, 2.0, DisplayPort, Thunderbolt, and V-by-One. It can safely absorb repetitive ESD strikes at 12kV (contact discharge, IEC 61000-4-2) without performance degradation and safely dissipate 2A of 8/20s surge current (IEC 61000-4-5 2nd edition). Features & Benefits ESD, IEC 61000-4-2, 12kV 0.02A(TYP) at 5V contact, 18kV air Space efficient 0201 footprint Additional Information AEC-Q101 qualified Halogen free, lead free and RoHS compliant EFT, IEC 61000-4-4, 40A (5/50ns) Moisture Sensitivity Lightning, 2A (8/20 as defined Level(MSL -1) in IEC 61000-4-5 2nd edition) Low leakage current of Resources Accessories Samples Applications Ultra-high speed data lines LVDS interfaces USB 3.2, 3.1, 3.0, and 2.0 Consumer, mobile and Pinout portable electronics HDMI 2.1, 2.0, 1.4a, 1.3 Tablet PC and external DisplayPort(TM) storage with high speed Thunderbolt (Light Peak) interfaces 12 V-by-One Functional Block Diagram 2 1 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/17/21TVS Diode Array Datasheet SP3208 0.08pF 12kV Bidirectional Discrete TVS Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 2 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A, I/O to I/O 5 V RWM R Breakdown Voltage V I =1mA, I/O to I/O 6.2 7.5 V BR R Reverse Leakage Current I V =5V 0.02 0.1 A LEAK R I =1A, t =8/20s, I/O to I/O 12 15 V pp p 1 Clamp Voltage V C I =2A, t =8/20s, I/O to I/O 14.5 18 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 1.2 DYN P IEC 61000-4-2 (Contact Discharge) 12 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 18 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz, I/O to I/O 0.08 0.13 pF CI/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping Voltage vs. IPP 16.0 0.3 14.0 12.0 0.2 10.0 8.0 6.0 0.1 4.0 2.0 0.0 0.0 1.01.2 1.41.6 1.82.0 0.01.0 2.03.0 4.05.0 Bias Voltage (V) Peak Pulse Current-I (A) PP 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/17/21 Capacitance (pF) Clamp Voltage- Vc (V)