TVS Diode Array (SPA Diodes) Lightning Surge Protection- SP3312T Series RoHS Pb GREEN SP3312T Series 3.3V 15A Diode Array Description The SP3312T integrates 4 channels (2 differential pair) of low capacitance diodes to protect sensitive I/O pins against lightning induced surge events and ESD. This robust component can safely absorb up to 15A per IEC 61000-4-5 (t =8/20s)without performance degradation p and a minimum 30kV ESD per IEC 61000-4-2 international standard. The low loading capacitance makes the SP3312T ideal for protecting high-speed signal pins. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 45 30kV contact, 30kV air 0.01A (TYP) at 3.3V EFT, IEC 61000-4-4, 40A Low variation in 3 6 (t =5/50ns) capacitance vs. p bias voltage: 0.3pF Lightning , IEC 61000- 2 7 Typical(V =0 to 2.5V) 4-5 2nd edition, 15A R (t =8/20s) AEC-Q101 qualified p 1 8 L ow capacitance of 1.3pF Moisture Sensitivity Level (TYP) per I/O (MSL-1) Functional Block Diagram Applications 10/100/1000 Ethernet Security Cameras Integrated magnetics/ Industrial Controls RJ45 connectors Notebook & Desktop Pin1 and 8 Pin2 and 7 LAN/WAN Equipment Computers Pin3 and 6 Pin4 and 5 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/24/19 TVS Diode Array (SPA Diodes) Lightning Surge Protection- SP3312T Series Absolute Maximum Ratings Thermal Information Symbol Parameter Value Units Parameter Rating Units Storage Temperature Range -55 to 150 C I Peak Current (t =8/20s) 15.0 A PP p Maximum Junction Temperature 150 C P Peak Pulse Power (t =8/20s) 250 W PK p Maximum Lead Temperature 260 C T Operating Temperature -40 to 125 C OP (Soldering 20-40s) T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 3.3 V RWM Snap Back Voltage V I =50mA 2.8 V SB SB Reverse Leakage Current I V =3.3V, I/O to GND 0.01 0.05 A LEAK R I =1A, t =8/20s, Fwd 6.0 V PP p 1 Clamp Voltage V I =2A, t =8/20s, Fwd 7.0 V C PP p I =10A, t =8/20s, Fwd 13.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.40 DYN p IEC 61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 30 kV Variation in Capacitance with Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 0.3 2.0 pF 1 Reverse Bias V = 0 to 2.5V, f= 1MHz R 1 Diode Capacitance C Reverse Bias=0V 1.3 4.0 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamping Voltage vs I Capacitance vs. Reverse Bias PP 20.0 1.5 1.2 15.0 0.9 10.0 0.6 5.0 0.3 0.0 0.0 0.05.0 10.0 15.0 00.3 0.60.9 1.21.5 1.82.1 2.42.7 33.3 Peak Pulse Current-I (A) Bias Voltage (V) PP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/24/19 Clamp Voltage (V ) C SP4062 Capacitance (pF)