TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTG RoHS Pb GREEN SP3384NUTG, 3.3V, 15A Diode Array Description The SP3384NUTG is a low-capacitance, TVS Diode Array designed to provide protection against ESD (electrostatic discharge), CDE (cable discharge events), EFT (electrical fast transients), and lightning induced surges for highspeed, differential data lines. Its packaged in a DFN package (3.0 x 2.0mm) and each device can protect up 4 channels up to 15A (IEC 61000-4- 5 2nd edition,) and up to 30kV ESD (IEC 61000-4-2). The SP3384NUTG with its low capacitance and low clamping voltage makes it ideal for high-speed data interfaces up to 10GbE application found in switches, servers, etc. Pinout Features ESD, IEC 61000-4-2, Low operating and 10 9 8 7 6 30kV contact, 30kV air clamping voltage EFT, IEC 61000-4-4, 40A DFN-10 package is (5/50ns) optimized for high-speed data line routing Lightning, IEC 61000- nd 4-5 2 edition, 15A Provides protection for (t =8/20s) two differential data pairs 1 2 3 4 5 P (4 channels) up to 15A Low capacitance of Note: PIN3, PIN8 and middle PADs are same potential 0.5pF 0V (TYP) AEC-Q101 qualified Low leakage current of Halogen free, Lead free Top View 3nA(typ) & 40nA(max) at and RoHS compliant 3.3V Moisture Sensitivity Level Functional Block Diagram Low leakage current of (MSL -1) 40nA at 3.3V in 100C 1 2 45 Applications WAN/LAN Equipment Integrated Magnetics Desktops, Servers and Smart TV Notebooks 2.5G/5G/10G Ethernet 3,8 LVDS Interfaces Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 08/19/19 NC middle pad NC middle pad NC middle pad NC TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTG Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 15 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 3.3 V RWM R Breakdown Voltage V I = 1mA 6.5 9 V BR R V =3.3V 3 20 nA R Reverse Leakage Current I LEAK V =3.3V at 100C 40 nA R Holding Voltage V I/O to I/O 2.3 V HOLD I =1A, t =8/20s 4 5.5 V PP p 1 Clamp Voltage V C I =15A, t =8/20s 12 15 V PP p 2 Dynamic Resistance R TLP, t =100ns 0.34 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1,3 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 0.5 0.7 pF I/O-I/O Notes: 1Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=90ns 3. Device stressed with ten non-repetitive ESD pulses. 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 1.0 100% 90% 0.8 80% 70% 0.6 60% 50% 0.4 40% 30% 0.2 20% 0.0 10% 0.00.3 0.60.9 1.21.5 1.82.1 2.42.7 3.03.3 0% Bias Voltage (V) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 08/15/19 Percent of I PP Capacitance (pF)