TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3422 RoHS Pb GREEN SP3422 0.2pF 22kV Diode Array Description The SP3422 integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-by-One , USB3.0, USB2.0, and IEEE 1394. Pinout Features ESD, IEC 61000-4-2, +22/ Low leakage current of -10kV contact, +22/-10kV 20nA (TYP) at 5V air Halogen free, Lead free EFT, IEC 61000-4-4, 40A and RoHS compliant (t =5/50ns) P Moisture Sensitivity Lightning, IEC 61000-4-5 Level(MSL -1) nd 2 edition, 2A (t =8/20s) P Low capacitance of 0.2pF (TYP) at 3GHz Functional Block Diagram Applications V-by-One Flat Panel Displays Embedded DisplayPort LCD/LED TVs USB 2.0/3.0 Ports Smartphones MIPI Camera and Display Mobile Computing Serial bus interfaces such as IEEE 1394 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: GD. 12/16/20 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3422 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5.0 V RWM R Reverse Leakage Current I V =5V, Any I/O to GND 0.02 1.00 A LEAK R I =1A, t =8/20s, Fwd 12.9 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 16.7 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 1.8 DYN P IEC 61000-4-2 (Contact) +22/-10 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) +22/-10 kV 1 Diode Capacitance C Reverse Bias=0V, f=3 GHz 0.2 pF I/O-GND 1 Note: Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Positive Transmission Line Pulsing (TLP) Plot Negative Transmission Line Pulsing (TLP) Plot 0 20 -5 15 -10 10 -15 5 -20 -25 -20 -15 -10 -5 0 0 TLP Voltage (V) 0 10 20 30 40 50 TLP Voltage (V) IEC 6100042 +8 kV Contact ESD Clamping Voltage IEC 6100042 -8 kV Contact ESD Clamping Voltage 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: GD. 12/16/20 TLP Current (A) TLP Current (A)