TVS Diode Array Datasheet SP3522 0.15pF 22kV ESD Protection diodes RoHS Pb GREEN ELV Description The SP3522 integrates ultra low capacitance diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One, HDMI, USB3.0, USB2.0, and IEEE 1394. Features & Benefits ESD, IEC 61000-4-2, 22kV Facilitates excellent signal contact, 22kV air integrity Additional Information EFT, IEC 61000-4-4, 40A ELV Compliant (tP=5/50ns) AEC-Q101 Qualified Lightning, IEC 61000-4-5, 2nd Halogen free, Lead free and edition, 2.5A (tP=8/20s) RoHS compliant Low capacitance of 0.15pF Moisture Sensitivity (TYP) at 3GHz Level(MSL -1) Low profile 0201 DFN Resources Accessories Samples packages and SOD882 packages Pinout Applications Ultra-high speed data lines Tablet PC and external 0201 DFN SOD882 storage with high speed USB 3.1, 3.0, 2.0 interfaces 1 HDMI 2.0, 1.4a, 1.3 1 Applications requiring high DisplayPort(TM) ESD performance in small V-by-One packages LVDS interfaces Consumer, mobile and portable electronics 2 2 1 Functional Block Diagram Bottom View 2 1 Absolute Maximum Ratings 2 Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -45 to 125 C OP T Storage Temperature -55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those Unidirectional Bidirectional indicated in the operational sections of this specification is not implied. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 04/27/21TVS Diode Array Datasheet SP3522 0.15pF 22kV ESD Protection diodes Electrical Characteristics - (TOP=25C) Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.15 pF R Breakdown Voltage V I =1mA 9.2 V BR T Reverse Working Voltage I 1A 7.0 V R Reverse Leakage Current I V =5.0V 0.02 1 A L RWM 2 Dynamic Resistance TLP, t =100ns, I/O to GND 0.96 P 1 Clamping Voltage V I =2.5A 14.5 V CL PP IEC 61000-4-2 (Contact) 22 1 ESD Withstand Voltage kV IEC 61000-4-2 (Air) 22 Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Clamping Voltage vs IPP 110% 16.0 100% 14.0 90% 12.0 80% 10.0 70% 60% 8.0 50% 6.0 40% 4.0 30% 2.0 20% 10% 0.0 11.5 22.5 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Peak Pulse Current-I (A) PP Time (s) Positive Transmission Line Pulsing (TLP) Plot Negative Transmission Line Pulsing (TLP) Plot 40 0 35 -5 30 -10 25 -15 20 -20 15 -25 10 -30 5 -35 -40 0 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 55 TLP Voltage (V) TLP Voltage (V) 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 04/27/21 Clamp Voltage (V ) TLP Current (A) C Percent of I PP TLP Current (A)