TVS Diode Array (SPA Diodes) Enhanced ESD Discrete TVS Series - SP3530 RoHS Pb GREEN ELV SP3530 0.3pF 22kV unidirectional TVS diode Description This SP3530 unidirectional diode provides a high level of protection for electronic equipment that may be exposed to electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One , HDMI, USB3.0, USB2.0, and IEEE 1394. Pinout Features ESD, IEC 61000-4-2, Facilitates excellent signal 22kV contact, 22kV air integrity 0201 DFN SOD882 EFT, IEC 61000-4-4, 40A ELV Compliant 1 (t =5/50ns) 1 P AEC-Q101 qualified Lightning, IEC 61000- Halogen free, Lead free nd 4-5, 2 edition, 2.5A and RoHS compliant (t =8/20s) P Moisture Sensitivity Level Low capacitance of 0.3pF (MSL -1) (TYP) at 3GHz 2 2 Low profile 0201 DFN packages and SOD882 Bottom View packages Functional Block Diagram Applications Ultra-high speed data Consumer, mobile and 1 lines portable electronics 1 USB 3.1, 3.0, 2.0 Tablet PC and external storage with high speed HDMI 2.0, 1.4a, 1.3 interfaces (TM) DisplayPort Applications requiring V-by-One high ESD performance in LVDS interfaces small packages 2 2 Unidirectional Bidirectional 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/08/20 TVS Diode Array (SPA Diodes) Enhanced ESD Discrete TVS Series - SP3530 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (T =25C) OP Parameter Test Conditions Min Typ Max Units Input Capacitance V = 0V, f = 3GHz 0.30 pF R Breakdown Voltage V I =1mA 8.2 V BR T Reverse Working Voltage I 1A 7.0 V R Reverse Leakage Current I V =5.0V 0.02 1 A L RWM 2 Dynamic Resistance TLP, t =100ns, I/O to GND 0.58 P 1 Clamping Voltage V I =2.5A 11.8 V CL PP IEC 61000-4-2 (Contact) 22 1 ESD Withstand Voltage kV IEC 61000-4-2 (Air) 22 Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamping Voltage vs I 8/20s Pulse Waveform PP 110% 14.0 100% 12.0 90% 80% 10.0 70% 8.0 60% 6.0 50% 40% 4.0 30% 2.0 20% 10% 0.0 0% 11.5 22.5 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) Peak Pulse Current - I (A) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/08/20 Clamp Voltage (V ) C Percent of I PP