TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SP4060 Series RoHS Pb GREEN SP4060 Series 2.5V 20A Diode Array Description The SP4060 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely absorb up to 20A per IEC 61000-4-5 (t =8/20s) without p performance degradation and a minimum 30kV ESD per IEC 61000-4-2 International Standard. Their low loading capacitance also makes them ideal for protecting high speed signal pins. Features ESD, IEC 61000-4-2, Low capacitance of 4.4pF 30kV contact, 30kV air (TYP) per I/O Pinout EFT , IEC 61000-4-4, 40A Low leakage current of (5/50ns) 1A (MAX) at 2.5V Lightning, IEC 61000-4-5, Moisture Sensitivity Level I/O 8 I/O 1 20A (8/20s) (MSL-1) I/O 7 I/O 2 I/O 6 I/O 3 Applications I/O 5 I/O 4 GND LCD/PD TVs Set Top Boxes NC Desktops Notebooks Game Consoles Functional Block Diagram I/O 8 I/O 7 I/O 6 Application Example I/O 5 LVDS Interface LVDS Controller CLK+ CLK- A0+ A0- Outside A1+ World I/O 2 I/O 4 I/O 1 I/O 3 A1- GND A2+ A2- Additional Information Signal Shield GND Datasheet Resources Samples SP4060-08ATG Shield GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection - SP4060 Series Thermal Information Absolute Maximum Ratings Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range 55 to 150 C I Peak Current (t =8/20s) 20.0 A PP p Maximum Junction Temperature 150 C P Peak Pulse Power (t =8/20s) 300 W PK p Maximum Lead Temperature 260 C T Operating Temperature 40 to 125 C OP (Soldering 20-40s) T Storage Temperature 55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 2.5 V RWM Snap Back Voltage V I =50mA 2.0 V SB SB Reverse Leakage Current I V =2.5V, I/O to GND 0.5 1.0 A LEAK R I =1A, t =8/20s, Fwd 4.5 5.5 V PP p I =5A, t =8/20s, Fwd 6.0 7.2 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Fwd 8.0 9.6 V PP p I =20A, t =8/20s, Fwd 12.5 15.0 V PP p IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V 4.4 5.0 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V 2.2 pF I/O-I/O 1. Note: Parameter is guaranteed by design and/or device characterization. 8/20s Pulse Waveform Clamping Voltage vs. I PP 110% 14.0 100% 12.0 90% 80% 10.0 70% 8.0 60% 50% 6.0 40% 4.0 30% 20% 2.0 10% 0.0 0% 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Peak Pulse Current-I (A) Time (s) PP 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 Percent of I PP Clamp Voltage (V ) C