TVS Diode Array (SPA Diodes) Lightning Surge Protection- SP4065 Series RoHS Pb GREEN SP4065 Series 3.3V 20A Diode Array Description The SP4065 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely absorb up to 20A per IEC 61000-4-5, 2nd Edition (tp=8/20s) without performance degradation and a minimum 30kV ESD per IEC 61000-4-2 International Standard. Their low loading capacitance also makes them ideal for protecting highspeed signal pins. Pinout Features ESD, IEC 61000-4-2, L ow leakage current of 30kV contact, 30kV air 1A (MAX) at 3.3V I/O 8 I/O 1 EFT, IEC 61000-4-4, 40A Halogen free, Lead-free I/O 7 I/O 2 (5/50ns) and RoHS compliant I/O 6 I/O 3 Lightning , IEC 61000-4-5, Moisture Sensitivity Level I/O 5 I/O 4 2nd Edition 20A (8/20s) (MSL - Level 1) GND NC L ow capacitance of 4.4pF (TYP) per I/O Functional Block Diagram Applications LCD/LED TVs Notebooks I/O 8 I/O 7 I/O 6 I/O 5 Desktops 1Gb Ethernet Game Consoles Network Hardware Set Top Boxes Small Cells Application Example LVDS Interface LVDS Controller I/O 2 I/O 4 I/O 1 I/O 3 GND CLK+ CLK- A0+ Additional Information A0- Outside A1+ World A1- A2+ A2- Datasheet Resources Samples Signal Shield GND SP4065-08ATG Life Support Note: Shield GND Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/19/19 TVS Diode Array (SPA Diodes) Lightning Surge Protection- SP4065 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units I Peak Current (t =8/20s) 20.0 A Storage Temperature Range -55 to 150 C PP p Maximum Junction Temperature 150 C P Peak Pulse Power (t =8/20s) 300 W PK p Maximum Lead Temperature T Operating Temperature -40 to 125 C OP 260 C (Soldering 20-40s) T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 3.3 V RWM Snap Back Voltage V I =50mA 2.8 V SB SB Reverse Leakage Current I V =3.3V, I/O to GND 0.5 1.0 A LEAK R I =1A, t =8/20s, Fwd 5.5 V PP p I =5A, t =8/20s, Fwd 7.0 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Fwd 9.0 V PP p I =20A, t =8/20s, Fwd 13.5 V PP p Dynamic Resistance R (V - V ) / (I - I ) 0.4 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V 4.4 5.0 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V 2.2 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or device characterization. Clamping Voltage vs. I Capacitance vs. Bias PP 14.0 5.0 12.0 4.0 10.0 3.0 8.0 6.0 2.0 4.0 1.0 2.0 0.0 0.0 1.053.0 .0 7.09.0 11.013.015.0 17.0 19.021.0 00.5 11.5 22.5 3 Peak Pulse Current-I (A) PP Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/19/19 Clamp Voltage (V ) C Capacitance (pF)