TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP4337 RoHS Pb GREEN SP4337 0.18pF 15KV Bidirectional TVS Description SP4337 is specifically designed to protect high-speed interfaces against ElectroStatic Discharge (ESD), such as High-Definition Multimedia Interface (HDMI) and DisplayPort interfaces, Thunderbolt and USB 3.1 Gen 1. The signal line is protected by a TVS diode offering low line capacitance of 0.18 pF typical. SP4337 can safely absorb repetitive ESD strikes up to 15 kV contact exceeding IEC 61000-4-2, level 4 ( 8kV contact discharge). Excellent low capacitance, clamping capability, low leakage, and fast response time make this parts an ideal solution for protecting high speed data lines. Pinout Features ESD, IEC 61000-4-2, Low capacitance of 0201 Flipchip 15kV contact , 15kV Air 0.18pF (Typ VR=0V) EFT, IEC 61000-4-4, 40A Space efficient 0201 12 (5/50ns) Halogen free, lead free Lightning, 7A (8/20 as and RoHS compliant defined in IEC 61000-4-5 2nd edition) Functional Block Diagram Applications USB 4.0 S-ATA HDMI 2.5G/5G/10G Ethernet DisplayPort 2 1 Thunderbolt Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/17/21 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP4337 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 7.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5 V RWM R Breakdown Voltage V I =1mA 7.8 V BR R Reverse Leakage Current I V =5V 1 100 nA LEAK R Holding Voltage V I/O to GND 2.3 V HOLD 1 Clamp Voltage V I =7A, t =8/20s, I/O to GND 5 7 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.23 DYN P IEC 61000-4-2 (Contact Discharge) 15 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV 1 Diode Capacitance C Reverse Bias=0V, f= 1 MHz 0.18 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs Reverse Bias Clamping Voltage vs I PP 0.50 10.0 0.45 9.0 0.40 8.0 0.35 7.0 0.30 6.0 0.25 5.0 0.20 4.0 0.15 3.0 0.10 2.0 0.05 1.0 0.00 0.0 012345 1 234567 Peak Pulse Current- I (A) Bias Voltage (V) PP 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 03/17/21 Capacitance (pF) Clamp Voltage (V ) C