TVS Diode Arrays Electronic Protection Array for ESD and Overvoltage Protection SP721 The SP721 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP721 has 2 protection SCR/Diode device structures per input. There are a total of 6 available inputs that can be used to protect up to 6 external signal or bus lines. Over-voltage protection is from the IN (Pins 1 - 3 and Pins 5 - 7) to V+ or V-. The SCR structures are designed for fast triggering at a threshold of one +V diode threshold above V+ (Pin 8) or a -V diode threshold below BE BE V- (Pin 4). From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one V above V+. A similar clamp to V- is activated if a negative pulse, BE one V less than V-, is applied to an IN input. Standard ESD Human BE Body Model (HBM) Capability is: Features HBM ESD Interface Capability for HBM Standards STANDARD MODE R C ESD (V) - MIL STD 3015.7 15kV IEC 61000-4-2 Air 330 150pF >15kV - IEC 61000-4-2, Direct Discharge, - Single Input 4kV (Level 2) Direct 330 150pF >4kV - Two Inputs in Parallel 8kV (Level 4) Direct, Dual Pins 330 150pF >8kV - IEC 61000-4-2, Air Discharge 15kV (Level 4) MIL-STD-3015.7 Direct, In-Circuit 1.5k 100pF >15kV High Peak Current Capability - IEC 61000-4-5 (8/20s) 3A Refer to Figure 1 and Table 1 for further detail. Refer to Application - Single Pulse, 100s Pulse Width 2A Notes AN9304 and AN9612 for additional information. - Single Pulse, 4s Pulse Width 5A Designed to Provide Over-Voltage Protection Ordering Information - Single-Ended Voltage Range to +30V - Differential Voltage Range to . 15V TEMP. RANGE PKG. Min. o PART NO. ( C) PACKAGE NO. Order Fast Switching . 2ns Rise Time SP721AP -40 to 105 8 Ld PDIP E8.3 2000 o Low Input Leakages 1nA at 25 C Typical SP721AB -40 to 105 8 Ld SOIC M8.15 1960 SP721ABT -40 to 105 8 Ld SOIC M8.15 2500 Low Input Capacitance . 3pF Typical Tape and Reel An Array of 6 SCR/Diode Pairs o o Operating Temperature Range -40 C to 105 C Pinout Applications SP721 (PDIP, SOIC) Microprocessor/Logic Input Protection TOP VIEW Data Bus Protection Analog Device Input Protection IN 1 8 V+ Voltage Clamp IN 2 7 IN Functional Block Diagram IN 3 6 IN V+ 8 V- 4 5 IN 3, 5-7 IN 1 IN 2 IN 4 V- 234 www.littelfuse.comTVS Diode Arrays Electronic Protection Array for ESD and Overvoltage Protection SP721 Absolute Maximum Ratings Thermal Information o Continuous Supply Voltage, (V+) - (V-)......................... +35V Thermal Resistance (Typical, Note 1) ( C/W) JA Forward Peak Current, I to V , I to GND PDIP Package ............................................160 IN CC IN (Refer to Figure 6)..................................2A, 100s SOIC Package ...........................................170 o o ESD Ratings and Capability (Figure 1, Table 1) Maximum Storage Temperature Range ..................-65 C to 150 C o Load Dump and Reverse Battery (Note 2) Maximum Junction Temperature (Plastic Package) ..............150 C o Maximum Lead Temperature (Soldering 10s).........................300 C (SOIC Lead Tips Only) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. is measured with the component mounted on an evaluation PC board in free air. JA o o Electrical Specifications T A = -40 C to 105 C, V = 0.5V , Unless Otherwise Specified IN CC PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Operating Voltage Range, V - 2 to 30 - V SUPPLY V = (V+) - (V-) SUPPLY Forward Voltage Drop IN to V- V I = 1A (Peak Pulse) - 2 - V FWDL IN IN to V+ V - 2 - V FWDH Input Leakage Current I -20 5 +20 nA IN 5 Quiescent Supply Current I - 50 200 nA QUIESCENT Equivalent SCR ON Threshold Note 3 - 1.1 - V Equivalent SCR ON Resistance V /I Note 3 - 1 - FWD FWD Input Capacitance C -3- pF IN Input Switching Speed t -2- ns ON NOTES: 2. In automotive and battery operated systems, the power supply lines should be externally protected for load dump and reverse battery. When the V+ and V- Pins are connected to the same supply voltage source as the device or control line under protection, a current limiting resistor should be connected in series between the external supply and the SP721 supply pins to limit reverse battery current to within the rated maximum limits. Bypass capacitors of typically 0.01F or larger from the V+ and V- Pins to ground are recommended. 3. Refer to the Figure 3 graph for definitions of equivalent SCR ON Threshold and SCR ON Resistance. These characteristics are given here for thumb-rule information to determine peak current and dissipation under EOS conditions. TABLE 1. ESD TEST CONDITIONS ESD Capability ESD capability is dependent on the application and defined test standard.The STANDARD TYPE/MODE R C V D D D evaluation results for various test standards and methods based on Figure 1 MIL-STD-3015.7 Modified HBM 1.5k 100pF 15kV are shown in Table 1. Standard HBM 1.5k 100pF 6kV For the Modified MIL-STD-3015.7 condition that is defined as an in-circuit IEC 61000-4-2 HBM, Air Discharge 330 150pF 15kV method of ESD testing, the V+ and V- pins have a return path to ground and HBM, Direct Discharge 330 150pF 4kV the SP721 ESD capability is typically greater than 15kV from 100pF through 1.5k. By strict definition of MIL-STD-3015.7 using pin-to-pin device testing, HBM, Direct Discharge, 330 150pF 8kV the ESD voltage capability is greater than 6kV. The MIL-STD-3015.7 results Two Parallel Input Pins were determined from AT&T ESD Test Lab measurements. EIAJ IC121 Machine Model 0k 200pF 1kV The HBM capability to the IEC 61000-4-2 standard is greater than 15kV R R D 1 for air discharge (Level 4) and greater than 4kV for direct discharge (Level 2). Dual pin capability (2 adjacent pins in parallel) is well in excess CHARGE DISCHARGE SWITCH SWITCH of 8kV (Level 4). C D IN H.V. For ESD testing of the SP721 to EIAJ IC121 Machine Model (MM) standard, SUPPLY DUT V the results are typically better than 1kV from 200pF with no series resistance. D IEC 1000-4-2: R 50 to 100M 1 MIL-STD-3015.7: R 1 to 10M 1 FIGURE 1. ELECTROSTATIC DISCHARGE TEST 235 www.littelfuse.com TVS DIODE ARRAYS