TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP7538P Series RoHS GREEN Pb SP7538P Series 0.5pF 12KV Diode Array Description The SP7538P integrates 8 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust device can safely absorb repetitive ESD strikes above the maximum level maximum level, 8kV contact discharge, as specified in the international standard IEC 61000-4-2, without performance degradation standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One, HDMI, USB3.0, USB2.0, and IEEE 1394. Pinout Features ESD, IEC61000-4-2, Low leakage current of 9 8 7 6 12kV contact, 25kV air 1.5A (MAX) at 5V EFT, IEC61000-4-4, 40A Halogen free, Lead free (t =5/50ns) and RoHS compliant P Lightning, IEC61000-4-5 AEC-Q101 qualified nd 2 edition, 4A (t =8/20s) P 12 3 45 Low capacitance of 0.5pF (TYP) per I/O Top View 12 3 45 Applications V-By-One Flat Panel Displays Embedded DisplayPort LCD/LED TVs USB 2.0/3.0 Ports Smartphones 9 8 7 6 HDMI Mobile Computing Bottom View Functional Block Diagram 1 2 4 5 6 7 8 9 3 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/29/19 TVS Diode Array (SPA Diodes) Low Capacitance ESD Protection - SP7538P Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 4.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5.0 V RWM R Reverse Leakage Current I V =5V, Any I/O to GND 1.5 A LEAK R I =1A, t =8/20s, Fwd 6.6 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 7.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.3 DYN P IEC 61000-4-2 (Contact) 12 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 25 kV 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.5 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 0.3 pF I/O-/O 1 Note: Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 2ns rise time. 8/20S Pulse Waveform Capacitance vs. Reverse Bias 110% 1 100% 0.9 90% 0.8 80% 0.7 70% 0.6 60% 50% 0.5 40% 0.4 30% 0.3 20% 0.2 10% 0.1 0% 0.05.0 10.015.020.025.030.0 0 Time (s) 00.5 11.5 22.533.5 44.5 5 Bias Voltage (V) Clamping Voltage vs I Transmission Line Pulsing(TLP) Plot PP 20 10.0 8.0 15 6.0 10 4.0 5 2.0 0.0 0 1.02.0 3.04.0 0 369 12 15 Peak Pulse Current-I (A) PP TLP Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/29/19 Percent of I PP Clamp Voltage (V ) C Capacitance (pF) TLP Current (A)