TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP8008 Series RoHS Pb GREEN SP8008 Series Diode Array Description The SP8008 integrates eight channels of ultra low capacitance common mode protection for electronic equipment exposed to electrostatic discharges (ESD). This robust component can effectively protect against ESD events exceeding the IEC 61000-4-2 contact ESD level of 8 kV without any performance degradation. The extremely low off-state capacitance of this component makes it ideal for protecting high speed signal pins such as V-by-One, Embedded DisplayPort, HDMI 1.0 through 2.1 and USB 2.0/3.0/3.1. Features Pinout ESD, IEC 61000-4-2, Small form factor DFN I/O 2 I/O 4 I/O 6 I/O 8 +30kV/-23kV contact, packages (JEDEC MO- +30kV/-23kV air 229) saves board space and supports straight- EFT, IEC 61000-4-4, 40A through routing of the (t =5/50ns) P data lines. Lightning, IEC 61000-4-5 nd Halogen free, Lead free 2 edition, 4A (t =8/20s) P and RoHS compliant Low capacitance of 0.3pF UL Recognized 0V, 3GHz (TYP) per I/O compound meeting 5634 N Menard Ave, I/O 1 I/O 3 I/O 5 ammabilitfl y rating V-0 GND Low leakage current of AEC-Q1 01 qualified 0.5A (MAX) at 5V Functional Block Diagram Applications LCD/PDP TVs Flat Panel Displays I/O 1 LCD/LED Monitors Digital Signage I/O 2 Notebook Computers HD Cameras/Projectors Ultrabooks USB and HDMI GND 3 14 GND interfaces Automotive Displays I/O 4 I/O 5 GND 6 13 GND I/O 7 I/O 8 GND 9 12 GND I/O 10 I/O 11 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP8008 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 4.0 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5 V RWM R Breakdown Voltage V I =1mA 6 V BR R Reverse Leakage Current I V =5V, I/O to GND 0.5 A LEAK R I =1A, t =8/20A, Fwd 9.39 V PP P 1 Clamp Voltage V I =2A, t =8/20A, Fwd 10.38 V C PP P I =4A, t =8/20A, Fwd 12.45 V PP P 1 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.4 DYN P IEC 61000-4-2 (Contact) +30 / -23 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) +30 / -23 kV 1 Diode Capacitance C Reverse Bias=0V, f=3 GHz 0.3 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 8/20s Pulse Waveform Clamping Voltage vs. I PP 14.0 110% 100% 12.0 90% 80% 10.0 70% 8.0 60% 50% 6.0 40% 4.0 30% 20% 2.0 10% 0.0 0% 1234 5 0.05.0 10.015.020.025.030.0 Peak Pulse Current-I (A) PP Time (s) Positive Transmission Line Pulsing (TLP) Plot NegativeTransmission Line Pulsing (TLP) Plot 45 0 40 -5 35 -10 30 -15 25 -20 20 -25 15 -30 10 5 -35 0 -40 -20-18 -16-14 -12-10 -8 -6 -4 -2 0 02468 10 12 14 16 18 20 22 24 TLP Voltage (V) TLP Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/23/19 Percent of I PP TLP Current (A) Clamp Voltage (VC) TLP Current (A)