TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP814x Series RoHS Pb GREEN SP814x Series 1.0pF 22KV Diode Array 06/10th/2020 ESU270-51 - Description The SP814x series integrates 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4- 2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as HDMI2.0, USB3.0, USB2.0, and IEEE 1394. Pinout Features 6 7 8 9 10 ESD, IEC 61000-4-2, Small form factor DFN 22kV contact, 22kV air packages (JEDEC MO-229) saves board space EFT, IEC 61000-4-4, 40A (t =5/50ns) AEC-Q101 qualified P Lightning, IEC 61000- Moisture Sensitivity nd 4-5 2 edition,2.5A Level (MSL -1) SP8142-04UTG (t =8/20s) P Halogen free, lead free 9 10 11 12 13 14 15 16 Low capacitance of 1.0pF and RoHS compliant (TYP) per I/O Low leakage current of 25nA (TYP) at 5V 2 1 8 7 65 4 3 SP8143-06UTG Functional Block Diagram Applications LCD/PDP TVs Set Top Boxes External Storage Mobile Phones DVD/ Blue-Ray Players Flash Memory Cards Pins 1,10 Pins 4,7 Desktops/Servers Digital Cameras Pins 2,9 Pins 5,6 Notebooks/Tablets Pins 3,8 SP8142-04UTG Pins 1,16 Pins 5,12 Pins 2,15 Pins 7,10 Pins 4,13 Pins 8,9 Pins 3,14 Pins 6,11 SP8143-06UTG 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: GD. 12/16/20 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP814x Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 2.5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Note: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 5.0 V RWM R Reverse Leakage Current I V =5V, Any I/O to GND 25 50 nA LEAK R Pins 110, 29, 47 and 56, SP8142 Channel Resistance R Pins 116, 215, 413 ,512, 7-10 and 8-9, 0.5 CH SP8143 I =1A, t =8/20s, Fwd 9.2 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 10.3 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.3 DYN P IEC 61000-4-2 (Contact) 22 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air) 22 kV 1 Diode Capacitance C Reverse Bias=0V, f=1 MHz 1.0 pF I/O-GND 1 Note: Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 1.5 110% 100% 1.2 90% 80% 70% 0.9 60% 50% 0.6 40% 30% 0.3 20% 10% 0 0% 00.5 11.5 22.533.5 44.5 5 0.05.0 10.015.020.025.030.0 Time (s) Bias Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: GD. 12/16/20 Percent of I PP Capacitance (pF)