TVS Diode Array Datasheet SPHV-C Series 200W Discrete Bidirectional TVS Diode RoHS Pb Description The Bidirectional SPHV-C series is designed for use in portable applications, LED lighting modules, automotive applications, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPHV-C series can safely absorb repetitive ESD strikes above the maximum level of the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation and safely dissipate up to 8A (SPHV12-C) of induced surge current (IEC 61000-4-5, 2nd Edition tP=8/20s) with very low clamping voltages. Features & Benefits ESD, IEC 61000-4-2, 30kV Low leakage current contact, 30kV air Small SOD882 packaging Additional Information EFT, IEC 61000-4-4, 40A helps save board space (5/50ns) AEC-Q101 Qualified Lightning, IEC 61000-4-5 Halogen free, Lead free 2nd Edition, 8A (tP=8/20s, and RoHS compliant SPHV12-C) Moisture Sensitivity Low clamping voltage Level(MSL -1) Resources Accessories Samples Pinout Applications LED Lighting Modules Mobile & Handhelds Portable Instrumentation RS232 / RS485 1 General Purpose I/O CAN and LIN Bus Functional Block Diagram 2 2 1 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: JC. 09/16/21TVS Diode Array Datasheet SPHV-C Series 200W Discrete Bidirectional TVS Diode Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 200 W pk p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. SPHV12-C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 12.0 V RWM R Breakdown Voltage V I =1mA 13.3 V BR R Reverse Leakage Current I V =12V 1.0 A LEAK R I =1A, t =8/20s, Fwd 19.0 V PP p 1 Clamp Voltage V C I =8A, t =8/20s, Fwd 25.0 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.48 DYN p Peak Pulse Current I t =8/20s 8.0 A pp p IEC61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 30 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. SPHV15-C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 15.0 V RWM R Breakdown Voltage V I =1mA 16.7 V BR R Reverse Leakage Current I V =15V 1.0 A LEAK R I =1A, t =8/20s, Fwd 22.0 V PP p 1 Clamp Voltage V C I =5A, t =8/20s, Fwd 30.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.43 DYN p Peak Pulse Current I t =8/20s 5.0 A pp p IEC61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 24 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: JC. 09/16/21