SPA Silicon Protection Array Products Low Voltage, Diode Compensated TVS Array for ESD and Lightning Protection RoHS Pb GREEN HF SPLV2.8-4 Lead-Free/Green Series Description The SPLV2.8-4 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at 30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 24A (IEC61000-4-5, t =8/20s) with very P low clamping voltages. Pinout Features t *& &4% t SFOU PG X MFBLBHF DVS P - 43 2 1 30kV contact, 30kV air 1A (MAX) at 2.8V *& t & 5 t 40* QJO DPOmHVSBUJPO (5/50ns) allows for simple ow- through layout t -JHIUOJOH *& 24A (8/20s) t X DBQBDJU BODF PG Q P - per line 56 7 8 Functional Block Diagram Applications t &UIFSOFU t OBMPH *OQVUT Pin 1.3 Pin 6.8 t / / &RVJQNFOU 8 t BTF 4U BUJPOT t TUFNT Z IJOH 4 XJUD 4 t %FTLUPQT 4FS FST BOE W /PUFCPPLT Pin 2.4 Pin 5.7 SPLV2.8-4 Series 2010 Littelfuse, Inc. 177 Specications are subject to change without notice. Revised: March 17, 2010 Please refer to SPA Silicon Protection Array Products Low Voltage, Diode Compensated TVS Array for ESD and Lightning Protection Absolute Maximum Ratings Parameter Rating Units Peak Pulse Power (t =8/20s) 400 8 P Peak Pulse Current (t =8/20s) 24 A P Operating Temperature -40 to 85 C Storage Temperature -60 to 150 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied. Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 2.8 V . R PMU BHF 7 XO FSTF SFBLEP W F 3 V I =2A 3.0 V 3 T PMU BHF 7 L BD 4OBQ V I =50mA 2.8 V 4 T Reverse Leakage Current I V =2.8V (Each Line) 1 A LEAK R 1 Clamping Voltage V I =5A, t =8/20s (Each Line) 6.8 8.5 V C PP P 1 Clamping Voltage V I =24A, t =8/20s (Each Line) 12.5 15.0 V C PP P IEC61000-4-2 (Contact) 30 kV 1 PMU BHF 7 8 JUITU BOE &4% V ESD IEC61000-4-2 (Air) 30 kV Dynamic Resistance R (V - V ) / (I - I ) (Each Line) 0.3 / C2 C1 PP2 PP1 1 V =0V, f=1MHz (Each Line) Diode Capacitance C 3.8 5 Q R D 5&4 /0 1 Parameter is guaranteed by design and/or device characterization. SPLV2.8-4 Series 2010 Littelfuse, Inc. 178 Specications are subject to change without notice. Revised: March 17, 2010 Please refer to