SPLV2.8HTG Littelfuse

TVS Diode Arrays (SPA Family of Products) Lightning Surge Protection - SPLV2.8 Series RoHS Pb GREEN SPLV2.8 Series 2.8V 40A TVS Array Description The SPLV2.8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in parallel with the low voltage TVS to protect one unidirectional line or a high speed data pair when two devices are paired together. These robust structures can safely absorb repetitive ESD strikes at 30kV (contact discharge) per the IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5, t =8/20s) with very low clamping voltages. P Pinout Features t *& &4% t X DBQBDJU BODF PG Q P - 3 30kV contact, 30kV air per line (Pin 2 to 1) *& t & 5 t SFOU PG X MFBLBHF DVS P - (5/50ns) 1A (MAX) at 2.8V t -JHIUOJOH *& t 5 +&%& 4NBMM 40 40A (8/20s) TO-236) package saves board space 1 2 Functional Block Diagram Applications t &UIFSOFU t OBMPH *OQVUT 3 t / / &RVJQNFOU 8 t BTF 4U BUJPOT t TUFNT Z IJOH 4 XJUD 4 t %FTLUPQT 4FS FST BOE W Notebooks 1 2 Application Example NC RJ-45 Connector J1 Ethernet PHY J8 NC See Application Example Detail section on page 135 for more information SPLV2.8 Series 2012 Littelfuse, Inc. 139 Specications are subject to change without notice. Revision: March 20, 2012 Please refer to www.littelfuse.com/SPA for current information. SPLV2.8 TVS Diode Arrays (SPA Family of Products) Lightning Surge Protection - SPLV2.8 Series Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 2.8 V RWM R Reverse Breakdown Voltage V I =2A 3.0 V BR T Snap Back Voltage V I =50mA 2.8 V SB T Reverse Leakage Current I V =2.8V (Pin 2 or 3 to 1) 1 A LEAK R 1 Clamping Voltage I =5A, t =8/20s (Pin 3 to 1) 5.7 7.0 V PP P 1 Clamping Voltage I =24A, t =8/20s (Pin 3 to 1) 8.3 12.5 V PP P V C 1 Clamping Voltage I =5A, t =8/20s (Pin 2 to 1) 7.0 8.5 V PP P 1 Clamping Voltage I =24A, t =8/20s (Pin 2 to 1) 13.9 15.0 V PP P Dynamic Resistance R (V - V ) / (I - I ) (Pin 2 to 1) 0.4 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 V =0V, f=1MHz (Pin 2 to 1) Diode Capacitance C 2.0 2.5 pF R D 1 Note: Parameter is guaranteed by design and/or device characterization. Absolute Maximum Ratings Figure 1: Capacitance vs. Reverse Voltage Parameter Rating Units 4.0 Peak Pulse Power (t =8/20s) 600 W P 3.5 Peak Pulse Current (t =8/20s) 40 A P 3.0 Operating Temperature -40 to 85 C 2.5 Storage Temperature -60 to 150 C 2.0 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device 1.5 at these or any other conditions above those indicated in the operational sections of this specication is not implied. 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) Figure 3: Pulse Waveform Figure 2: Clamping Voltage vs. I PP 14 110% 100% 12 90% 80% 10 70% 8 60% 50% 6 40% 4 30% 20% 2 10% 0% 0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 5 10 15 20 25 Peak Pulse Current-I (A) Time (s) PP SPLV2.8 Series 2012 Littelfuse, Inc. 140 Specications are subject to change without notice. Revision: March 20, 2012 Please refer to www.littelfuse.com/SPA for current information. Clamping Voltage-V (V) C Capacitance (pF) Percent of I PP