TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SR70 Series RoHS Pb GREEN SR70 Series 70V 40A Diode Array Description The SR70 consists of four, low capacitance, rail-to-rail diodes that provide protection against ESD and lightning surge events.These robust diodes can safely absorb up to 40A (t =8/20s) and repetitive ESD strikes at the maximum P level (Level 4) specified in the IEC 61000-4-2 international standard without performance degradation. Its low loading capacitance makes it ideal for protecting high-speed data lines such as VDSL and VDSL2. Pinout Features ESD, IEC61000-4-2 , Low capacitance of 2.0pF SOT-143-4 30kV contact discharge, (TYP) per I/O 30kV air discharge L ow clamp voltage EFT, IEC61000-4-4, 80A Vcc Small SOT143 (JEDEC TO- GND (t =5/50ns) p 253) packaging Lightning protection, IEC61000-4-5, 40A I/O 2 (t =8/20s) I/O 1 p Functional Block Diagram Applications xDSL Lines Equipment Video Lines 10/100/1000 Ethernet Customer Premises Application Example I/O I/O V CC Additional Information 1 4 Datasheet Resources Samples 2 3 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SR70 Series Thermal Information Absolute Maximum Ratings Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range 55 to 150 C I Peak Current (t =8/20s) 40.0 A PP p Maximum Junction Temperature 150 C T Operating Temperature 40 to 125 C OP Maximum Lead Temperature 260 C T Storage Temperature 55 to 150 C STOR (Soldering 20-40s) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 70 V RWM Reverse Leakage Current I V =70V 5 A LEAK R I =1A, t =8/20s, Fwd 1.4 V PP p 1 Clamp Voltage V I =10A, t =8/20s, Fwd 4.7 V C PP p I =30A, t =8/20s, Fwd 12 V PP p Dynamic Resistance R (V -V )/(I -I ) 0.35 DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV C Reverse Bias=0V, f=1MHz 2.0 3.0 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 1.3 2.0 pF I/O-I/O Note: 1. Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias Pulse Waveform 110% 100% 2.50 90% I/O -GND 80% 2.00 -I/O I/O 70% 60% 1.50 50% 40% 1.00 30% 20% 0.50 10% 0% 0.00 0.05.0 10.0 15.0 20.0 25.0 30.0 0.00.5 1.01.5 2.02.5 3.03.5 4.04.5 5.0 Time (s) DC Bias (V) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/17 Capacitance (pF) Percent of I PP