Thyristors Surface Mount 400V > T2500D Pb T2500D Description Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Features Blocking Voltage 400 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability High Surge Current Capability 60 A Peak at T = 80C C PbFree Package is Available Pin Out Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17Thyristors Surface Mount 400V > T2500D Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM 400 V V (Sine Wave 50 to 60 Hz, T = -40 to +100C, Gate Open) RRM J On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (T = +80C) I 6.0 A C T (RMS) Peak NonRepetitive Surge Current I 60 A TSM (One Full Cycle, Sine Wave 60 Hz, T = +80C) C 2 Circuit Fusing Considerations (t = 8.3 ms) I t 15 A2s Peak Gate Power (Pulse Width = 10 sec, T = +80C) P 16 W C GM Average Gate Power (t = 8.3 msec, T = +80C) P 0.2 W C GM (AV) Peak Gate Current (Pulse Width = 10 sec) I 4.0 A GM Operating Junction Temperature Range Rated V and V T -40 to +125 C RRM DRM J T Storage Temperature Range -40 to +150 C stg Thermal Characteristics Rating Symbol Value Unit R 8JC Thermal Resistance, JunctiontoCase C/W 2.7 Maximum Device Temperature for Soldering Purposes for 10 Sec T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17