Thyristors Through Hole Radial 400V > T2500D Pb T2500D Description Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Features Blocking Voltage 400 V High Surge Current Capability 60 A Peak at T All Diffused and Glass C = 80C Passivated Junctions for Greater Parameter PbFree Package is Uniformity and Stability Available Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pin Out Functional Diagram 4 A K G TO-220AB Case 221A Style 4 1 2 3 Additional Information Samples Datasheet Resources 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/27/20Thyristors Through Hole Radial 400V > T2500D Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM 400 V (Sine Wave 50 to 60 Hz, T = -40 to +100C, Gate Open) V J RRM On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (T = +80C) I 6.0 A C T (RMS) Peak NonRepetitive Surge Current I 60 A TSM (One Full Cycle, Sine Wave 60 Hz, T = +80C) C 2 Circuit Fusing Considerations (t = 8.3 ms) I t 15 A2s Peak Gate Power (Pulse Width = 10 sec, T = +80C) P 16 W C GM Average Gate Power (t = 8.3 msec, T = +80C) P 0.2 W C GM (AV) Peak Gate Current (Pulse Width = 10 sec) I 4.0 A GM Operating Junction Temperature Range Rated V and V T -40 to +125 C RRM DRM J Storage Temperature Range T -40 to +150 C stg Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.7 C/W 8JC Maximum Device Temperature for Soldering Purposes for 10 Sec T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Electrical Characteristics - OFF (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 10 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I AK DRM RRM J RRM - - 2.0 mA Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 3) (I = 30 A) V 2.0 V TM TM MT2(+), G(+) 10 25 MT2(+), G() 20 60 Gate Trigger Current (Continuous dc) I mA GT (V = 12 V, R = 100 ) D L MT2(), G() 15 25 MT2(), G(+) 30 60 Gate Trigger Voltage (Continuous dc) (All Four Quadrants) V 1.25 2.5 V GT (V = 12 Vdc, R = 100 ) D L Gate NonTrigger Voltage (Continuous dc) V 0.2 V GD (V = 12 Vdc, R = 100 , T = 100C) D L C Holding Current I 15 30 mA H (Main Terminal Voltage = 12 Vdc, Gate Open , Initiating Current) = 200 mA) Gate Controlled Turn-On Time t 1.6 s gt (Rated V , I = 10 A , I = 160 mA, Rise Time = 0.1 s) DRM T GT Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage dV/dt 50 V/s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 100C) D DRM J 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/27/20