T1635H-6I, T1635H-6T, T1635H-6G T1650H-6I, T1650H-6T, T1650H-6G Datasheet 16 A - 600 V H-series Snubberless Triac A2 Features Medium current Triac 150 C max. T turn-off commutation G j A1 Low thermal resistance with clip bonding A2 Very high 3 quadrant commutation capabilities Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) G G A2 A2 A1 A1 TO-220AB Application TO-220AB Ins. A2 The 600 V T1635H and T1650H are especially designed to operate in high power density or universal motor applications such as vacuum cleaner, coffee brewers, and inrush current limiter for inverter based home appliances. G A2 A1 DPAK Description Available in through-hole or surface mount packages, these Triac series are suitable for general purpose mains power ac switching. These 20 A Triacs provide a very high switching capability up to junction temperatures of 150 C. The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures. By using an internal ceramic pad, the TO-220AB insulated version provide voltage Product status link insulation (rated at 2500 V ). RMS T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G The surface mount DPAK package enables compact SMD based designs for automated manufacturing. Product summary I 16 A T(RMS) V /V 600 V DRM RRM I 35 or 50 mA GT DS5310 - Rev 4 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit 2 D PAK, T = 130 C c TO-220AB I RMS on-state current (full sine wave) 16 A T(RMS) TO-220AB Ins. T = 113 C c f = 50 Hz t = 20 ms 160 Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j f = 60 Hz t = 16.7 ms 168 2 2 2 t = 10 ms 169 I t I t value for fusing p A s Critical rate of rise of on-state current, I = 2 x I , tr G GT dl/dt f = 120 Hz T = 150 C 100 A/s j 100 ns, f = 100 Hz V / V /V DSM DRM RRM t = 10 ms T = 25 C Non Repetitive peak off-state voltage V p j V +100 RSM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Symbol Test conditions Quadrants Unit T1635H T1650H (1) I Max. 35 50 mA GT V = 12 V, R = 33 I - II - III D L V Max. 1.0 V GT V V = V , R = 3.3 k GD D DRM L I - II - III Min. 0.15 V I - III Max. 50 90 I I = 1.2 x I mA L G GT II Max. 80 110 (2) I = 500 mA, gate open I Max. 35 75 mA H T (2) V = 2/3 x V , gate open T = 150 C Min. 1000 1500 V/s dV/dt D DRM j (2) Without snubber T = 150 C Min. 21 28 A/ms (dl/dt)c j 1. Minimum I is guaranteed at 20% of I max. GT GT 2. For both polarities of A2 referenced to A1. DS5310 - Rev 4 page 2/13