T2035T-8G Datasheet 2 20 A 800 V D PAK Snubberless Triac Features A2 High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 C maximum junction temperature Three quadrants Surge capability V , V = 900 V DSM RSM A2 A1 Benefits: G High immunity to false turn-on thanks to high static dV/dt Better turn-off in high temperature environments thanks to (dI/dt)c DPAK Increase of thermal margin due to extended working T up to 150 C j Good thermal resistance due to non-insulated tab. A2 A2: Anode2 Applications A1: Anode1 General purpose AC line load switching G: Gate G Motor control circuits Home appliances A1 Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Product status link Description T2035T-8G Available in SMD, the T2035T-8G Triac can be used for the on/off or phase angle Product summary control function in general purpose AC switching where high commutation capability is required. The T2035T-8G can be used without a snubber RC circuit when the limits I 20 A T(RMS) defined are respected. V /V 800 V DRM RRM 2 D PAK package is UL-94,V0 flammability resin compliance. V /V 900 V DSM RSM Package environmentally friendly Ecopack 2 graded (RoHS and Halogen Free I 35 mA compliance). GT Snubberless is a trademark of STMicroelectronics. DS12739 - Rev 1 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.T2035T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 122 C RMS on-state current (full sine wave) 20 A T(RMS) c t = 20 ms 160 p Non repetitive surge peak on-state current (full cycle, T initial j I A TSM = 25 C t = 16.7 ms 168 p 2 2 2 t = 10 ms I t I t value for fusing 169 A s p Critical rate of rise of on-state current, I = 2 x I , tr 100 ns T initial = 150 C, f = 100 Hz dl/dt 100 A/s G GT j T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j V /V Non Repetitive peak off-state voltage t = 10 ms, T = 25 C 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j V Peak Gate Voltage 5 V GM P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j (1) V = 12 V, R = 30 I I - II - III Max. 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.0 V GT D L V V = 600 V, R = 3.3 k T = 150 C I - II - III Max. 0.15 V GD D L j I - III Max. 50 mA I I = 1.2 x I L G GT II Max. 80 mA (2) I I = 500 mA, gate open Max. 45 mA H T V = 536 V, gate open T = 125 C Min. 1500 V/s D j (2) dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j T = 125 C Min. 27.5 A/ms j (2) (dl/dt)c Without snubber T = 150 C Min. 17.5 A/ms j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. DS12739 - Rev 1 page 2/12