X-On Electronics has gained recognition as a prominent supplier of T2550-12G Triacs across the USA, India, Europe, Australia, and various other global locations. T2550-12G Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T2550-12G STMicroelectronics

T2550-12G electronic component of STMicroelectronics
T2550-12G STMicroelectronics
T2550-12G Triacs
T2550-12G  Semiconductors

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See Product Specifications
Part No. T2550-12G
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triacs 1200V 25A Snubberless Triac
Datasheet: T2550-12G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.0501 ea
Line Total: USD 2050.1 
Availability - 17013
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
17013
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 2.0501

16490
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 2.0501

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T2550-12G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T2550-12G and other electronic components in the Triacs category and beyond.

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T2550-12G, T2550-12T, T2550-12I Datasheet 25 A, 1200 V Snubberless Triacs A2 Features On-state RMS current: 25 A Blocking voltage: 1200 V G High static community and dynamic commutation A1 I = 50 mA A2 GT High endurance reliability Compact high voltage device G G A2 UL recognized component : UL1557 standard, reference file E81734 A2 A1 A1 TO-220AB TO-220AB Ins. A2 Applications Motor control circuits Heating control circuits G A2 A1 DPAK Description The T2550-12x is a 25 A 1200 V Snubberless Triac available in three packages: DPAK, TO-220AB and TO-220AB insulated. Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either inductive, capacitive or resistive load control. Product status link T2550-12G, T2550-12T, T2550-12I Product summary I 25 A T(RMS) V /V 1200 V DRM RRM I 50 mA GT DS10039 - Rev 5 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.T2550-12G, T2550-12T, T2550-12I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values, T = 25 C, unless otherwise stated) j Symbol Parameters Value Unit T = 100 C DPAK, TO-220AB c I RMS on-state current (full sine wave) 25 A T(RMS) T = 71 C TO-220AB Ins. c t = 20 ms 240 Non repetitive surge peak on-state current p I A TSM (full cycle, T initial = 25 C) j t = 16.7 ms 252 p 2 2 2 t = 10 ms 380 I t I t value for fusing p A s Critical rate of rise of on-state current T = 125 C dl/dt f = 60 Hz 100 A/s j I = 2 x I , t 100 ns G GT r V /V Repetitive peak off-state voltage 1200 V DRM RRM V /V t = 10 ms DSM RSM Non repetitive surge peak off-state voltage p 1300 V I t = 20 s Peak gate current 4 A GM p V t = 20 s Peak positive gate voltage 16 V GM p P Average gate power dissipation 1 W G(AV) T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Insulation RMS voltage, 1 minute TO-220AB Ins. 2500 V ins. Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) - Snubberless (3 quadrants) j Symbol Parameters Quadrant Value Unit Min. 2.5 I I - II - III mA GT V = 12 V, R = 33 Max. 50 D L V I - II - III Max. 1.3 V GT V V = V , R = 3,3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA, gate open Max. 60 mA H T I I = 1.2 I I - II - III Max. 80 mA L G GT (1) V = 67 % V gate open, T = 125 C dV/dt Min. 2500 V/s D DRM j (1) Without snubber, T = 125 C (dI/dt)c Min. 20 A/ms j t I = 13 A, V = 400 V, I = 100 mA, dl /dt = 100 mA/s, R = 30 I - II - III Typ. 2 s gt TM D G G L 1. For both polarities of A2 referenced to A1 DS10039 - Rev 5 page 2/14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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