T3035H-8I STMicroelectronics

T3035H-8I Datasheet 30 A - 800 V - 150 C 8H Triac in TO-220AB insulated Features A2 30 A high current Triac 800 V symmetrical blocking voltage 150 C maximum junction temperature T j G Three triggering quadrants High noise immunity - static dV/dt A1 Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Comply with UL1557 insulation: 2.5 kV Reference file: E81734 G Applications A2 A1 Home automation Smart AC plug Water heater, room heater and coffee machine TO-220AB insulated AC Induction and Universal Motor control Inrush current limiter in AC DC rectifiers Lighting and automation I/O control General purpose AC line load control Description Product status link Specifically designed to operate at 800 V and 150 C, the T3035H-8I Triac housed in TO-220AB insulated provides an enhanced thermal management: this 30 A Triac is T3035H-8I the right choice for a compact drive of heavy AC loads and enables the heatsink size reduction. Product summary Based on the ST Snubberless high temperature technology, it offers higher specified I 30 A T(RMS) turn off commutation and noise immunity levels up to the T max. j V /V 800 V DRM RRM The T3035H-8I safely optimizes the control of the hardest universal motors, heaters V /V 900 V DSM RSM and inductive loads for industrial control and home appliances. I 35 mA GT By using an internal ceramic pad, it provides a recognized voltage insulation, rated at 2500 V . RMS DS12682 - Rev 5 - December 2020 www.st.com For further information contact your local STMicroelectronics sales office.T3035H-8I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 91 C RMS on-state current (full sine wave) 30 A T(RMS) c t = 16.7 ms 283 Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j t = 20 ms 270 2 2 2 t = 10 ms 482 I t I t value for fusing p A s Critical rate of rise of on-state current, I = 2 x I , tr G GT dl/dt T = 25 C 100 A/s j 100 ns, f = 100 Hz V /V Repetitive peak off-state voltage 800 V DRM RRM V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j P Maximum gate power dissipation 5 W GM P T = 150 C Average gate power dissipation 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation RMS voltage, 1 minute 2.5 kV INS Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants Value Unit V = 12 V, R = 30 I - II - III Min. 5 mA D L I GT V = 12 V, R = 30 I - II - III Max. 35 mA D L V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = V , R = 3.3 k T = 150 C I - II - III Min. 0.15 V GD D DRM L j I - III Max. 75 mA I I = 1.2 x I L G GT II Max. 90 mA (1) I I = 500 mA, gate open Max. 60 mA T H (1) V = 536 V, gate open T = 150 C dV/dt Min. 2000 V/s D j (1) T = 150 C (dl/dt)c Without snubber network Min. 25 A/ms j 1. For both polarities of A2 referenced to A1. DS12682 - Rev 5 page 2/11