T1610T-8G-TR STMicroelectronics

T1610T-8G Datasheet 16 A - 800 V logic level T-series Triac in DPAK Features A2 150 C maximum junction temperature Three quadrants High commutation on resistive loads Surge capability V , V = 900 V DSM RSM A2 A1 Benefits: G Easy direct control by MCU thanks to low 10 mA I GT DPAK Increase of thermal margin due to extended working T up to 150 C j A2 Applications A2: Anode2 General purpose AC line load switching A1: Anode1 Small home appliances with resistive loads G: Gate G Hybrid relays A1 Inrush current limiting circuits Overvoltage crowbar protection Description The SMD T1610T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching with resistive loads. A Logic level T-series Triac, the T1610T-8G can be controlled directly from an MCU with a simplified circuit. T-series triacs are optimized for high EMI constraints. Product status link 2 The surface mount D PAK package enables compact SMT designs for automated T1610T-8G manufacturing. 2 D PAK package s molding compound resin is halogen-free and meets UL94 Product summary flammability standard level V0. I 16 A T(RMS) Package environmentally friendly Ecopack2 graded (RoHS and Halogen Free V /V 800 V DRM RRM compliance). V /V 900 V DSM RSM I 10 mA GT DS12532 - Rev 3 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.T1610T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I RMS on-state current (full sine wave) T = 126 C 16 A T(RMS) c t = 16.7 ms 126 Non repetitive surge peak on-state current (full cycle, T initial = 25 j I A TSM C t = 20 ms 120 2 2 2 t = 10 ms 95 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns f = 100 Hz 100 A/s G GT I GM Peak gate current 4 A t = 20 s, T = 150 C p j V Peak Gate Voltage 5 V GM P T = 150 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j (1) V = 12 V, R = 30 I I - II - III Max. 10 mA GT D L V V = 12 V, R = 30 GT D L I - II - III Max. 1.3 V V V = 800 V, R = 3.3 k T = 125 C I - II - III Min. 0.2 V GD D L j I = 1.2 x I I - III Max. 20 mA G GT I L I = 1.2 x I II Max. 30 mA G GT (2) I I = 500 mA, gate open Max. 25 mA T H V = 536 V, gate open T = 125 C Min. 100 V/s D j (2) dV/dt V = 402 V, gate open T = 150 C Min. 50 V/s D j T = 125 C 9 j (dV/dt)c = 0.1 V/s Min. A/ms T = 150 C 5.4 j (2) (dl/dt)c T = 125 C 3 j (dV/dt)c = 10 V/s Min. A/ms T = 150 C 1.8 j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. DS12532 - Rev 3 page 2/12