T1620T-8G 2 16 A - 800 V - D PAK Snubberless Triac Features A2 High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 C maximum junction temperature Three quadrants Surge capability V , V = 900 V DSM RSM A2 A1 Benefits: G High immunity to false turn-on thanks to high static dV/dt Improved turn-off in high temperature environments thanks higher (dI/dt)c DPAK Increase of thermal margin due to extended working T up to 150 C j Good thermal resistance due to non-insulated tab. A2 A2: Anode2 Applications A1: Anode1 General purpose AC line load switching G: Gate G Motor control circuits Home appliances A1 Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Product status link Description T1620T-8G Available in SMD, the T1620T-8G Triac can be used for the on/off or phase angle Product summary control function in general purpose AC switching where high commutation capability I 16 A is required. The T1620T-8G can be used without a snubber RC circuit when the limits T(RMS) defined are respected. V /V 800 V DRM RRM 2 D PAK package is UL-94,V0 flammability resin compliance. V /V 900 V DSM RSM Package environmentally friendly Ecopack2 graded (RoHS and Halogen Free I 20 mA GT compliance). DS12785 - Rev 2 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.T1620T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 126 C RMS on-state current (full sine wave) 16 A T(RMS) c t = 20 ms Non repetitive surge peak on-state current 120 p I A TSM (full cycle, T initial = 25 C t = 16.7 ms j 126 p 2 2 2 t = 10 ms 95 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns T initial = 150 C, f = 100 Hz 100 A/s G GT j T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j V Peak Gate Voltage 5 V GM P T = 150 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j (1) I V = 12 V, R = 30 I - II - III Max. 20 mA D L GT V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = 600 V, R = 3.3 k T = 150 C I - II - III Min. 0.2 V GD D L j I - III Max. 45 mA I I = 1.2 x I L G GT II Max. 55 mA (2) I I = 500 mA, gate open Max. 40 mA T H V = 536 V, gate open T = 125 C Min. 1000 V/s D j (2) dV/dt V = 402 V, gate open T = 150 C Min. 500 V/s D j T = 125 C Min. 6 A/ms j (2) (dl/dt)c Without snubber T = 150 C Min. 4.5 A/ms j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. DS12785 - Rev 2 page 2/12