T3050H-6G-TR STMicroelectronics

T3035H, T3050H Datasheet 30 A - 600 V H-series Snubberless Triac A2 Features High current Triac High immunity level G Low thermal resistance with clip bonding A1 Very high 3 quadrant commutations at 150 C capabilities A2 Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) G G A2 A2 A1 A1 Applications TO-220AB TO-220AB Ins. A2 Thanks to its high electrical noise immunity level and its strong current robustness, the T3035H, T3050H series is designed for the control of AC actuators in appliances and industrial systems. G A2 A1 DPAK Description Specifically designed to operate at 150 C, the 30 A triacs T3050H provide very high dynamic and enhanced performance in terms of power loss and thermal dissipation. This allows the heatsink size optimization, leading to space and cost effectiveness when compared to electro-mechanical solutions. Based on ST Snubberless technology, they offer a specified minimal commutation and high noise immunity levels valid up to the T max. j These devices safely optimize the control of universal motors and inductive loads Product status link found in power tools and major appliances. T3035H, T3050H By using an internal ceramic pad, they provide voltage insulation (rated at 2500 V ). RMS Product summary I 30 A T(RMS) V /V 600 V DRM RRM I 35 or 50 mA GT DS6689 - Rev 7 - November 2021 www.st.com For further information contact your local STMicroelectronics sales office.T3035H, T3050H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit 2 D PAK, T = 121 C c TO-220AB I RMS on-state current (full sine wave) 30 A T(RMS) TO-220AB Ins. T = 92 C c f = 50 Hz t = 20 ms 270 Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j f = 60 Hz t = 16.7 ms 284 2 2 2 t = 10 ms 487 I t I t value for fusing p A s Critical rate of rise of on-state current, I = 2 x I , tr G GT dl/dt f = 120 Hz T =150 C 50 A/s j 100 ns, f = 100 Hz V / V /V DSM DRM RRM t = 10 ms T = 25 C Non Repetitive peak off-state voltage V p j V +100 RSM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Symbol Test conditions Quadrants Unit T2035H T2050H (1) I Max. mA 35 50 GT V = 12 V, R = 33 I - II - III D L V Max. 1.0 V GT V V = V , R = 3.3 k I - II - III Max. 0.15 V GD D DRM L I - III Max. 75 90 I I = 1.2 x I mA L G GT II Max. 90 110 (2) I I = 500 mA, gate open Max. 60 75 mA T H (2) V = 2/3 x V , gate open T = 150 C dV/dt Min. 1000 1500 V/s D DRM j (2) T = 150 C (dl/dt)c Without snubber Min. 33 44 A/ms j 1. Minimum I is guaranteed at 20% of I max. GT GT 2. For both polarities of A2 referenced to A1. DS6689 - Rev 7 page 2/13