11AA02E48/11AA02E64 2K UNI/O Serial EEPROMs with EUI-48 or EUI-64 Node Identity Device Selection Table Density Page Size Temp. Part Number VCC Range Packages Node Address (bits) (Bytes) Ranges 11AA02E48 2K 1.8V-5.5V 16 I SN, TT EUI-48 11AA02E64 2K 1.8V-5.5V 16 I SN, TT EUI-64 Features Description Preprogrammed Globally Unique, 48-Bit or 64-Bit The Microchip Technology Inc. (1) Node Address 11AA02E48/11AA02E64 (11AA02EXX ) device is a 2 Kbit Serial Electrically Erasable PROM. The device is Compatible with EUI-48 and EUI-64 organized in blocks of x8-bit memory and support the Single I/O, UNI/O Serial Interface Bus (2) patented single I/O UNI/O serial bus. By using Low-Power CMOS Technology: Manchester encoding techniques, the clock and data - 1 mA active current, typical are combined into a single, serial bit stream (SCIO), - 1 A standby current, maximum where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. 256 x 8-Bit Organization Schmitt Trigger Inputs for Noise Suppression Note 1: 11AA02EXX is used in this document as Output Slope Control to Eliminate Ground Bounce a generic part number for the 11AA02E48 100 kbps Maximum Bit Rate Equivalent to and 11AA02E64 devices. 100 kHz Clock Frequency 2: Microchips UNI/O Bus products are Self-Timed Write Cycle (including Auto-Erase) covered by the following patents issued Page-Write Buffer for up to 16 Bytes in the U.S.A.: 7,376,020 and 7,788,430. STATUS Register for Added Control: Low-voltage design permits operation down to 1.8V, - Write Enable Latch bit with standby and active currents of only 1A and - Write-In-Progress bit 1 mA, respectively. Block Write Protection: The 11AA02EXX is available in standard 8-lead - Protect none, 1/4, 1/2 or all of array SOIC and 3-lead SOT-23 packages. Built-in Write Protection: - Power-on/off data protection circuitry Package Types (not to scale) - Write enable latch High Reliability: 3-Lead SOT-23 SOIC - Endurance: 1,000,000 erase/write cycles (TT) (SN) - Data retention: >200 years NC 1 8 VCC - ESD protection: >4,000V 2 VCC NC 2 7 NC 3-Lead SOT-23 and 8-Lead SOIC Packages 3 VSS NC 3 6 NC Pb-Free and RoHS Compliant 1 SCIO VSS 4 5 SCIO Available Temperature Ranges: - Industrial (I): -40C to +85C Pin Function Table Name Function SCIO Serial Clock, Data Input/Output VSS Ground VCC Supply Voltage 2008-2018 Microchip Technology Inc. DS20002122E-page 111AA02E48/11AA02E64 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SCIO w.r.t. VSS.....................................................................................................................................-0.6V to VCC+1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias.................................................................................................................-40C to 85C ESD protection on all pins.......................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): VCC = 2.5V to 5.5V TA = -40C to +85C VCC = 1.8V to 2.5V TA = -20C to +85C Param. Symbol Characteristic Min. Max. Units Test Conditions No. IH High-Level Input 0.7 VCC VCC+1 V D1 V Voltage D2 VIL Low-Level Input -0.3 0.3 VCC VVCC 2.5V Voltage -0.3 0.2 VCC VVCC <2.5V D3 VHYS Hysteresis of Schmitt 0.05 Vcc V VCC 2.5V (Note 1) Trigger Inputs (SCIO) D4 VOH High-Level Output VCC -0.5 V IOH =-300 A, VCC =5.5V Voltage VCC -0.5 V IOH = -200 A, Vcc = 2.5V D5 VOL Low-Level Output 0.4 VIOI= 300 A, VCC =5.5V Voltage 0.4 VIOI = 200 A, Vcc = 2.5V D6 IO Output Current Limit 4 mAVCC = 5.5V (Note 1) (Note 2) 3 mA Vcc = 2.5V (Note 1) D7 ILI Input Leakage 1 AVIN = VSS or VCC Current (SCIO) D8 CINT Internal Capacitance A = 25C, FCLK = 1 MHz, 7 pFT (all inputs and VCC = 5.0V (Note 1) outputs) D9 ICCREAD Read Operating 3 mAVCC = 5.5V, FBUS =100 kHz, Current CB = 100 pF 1 mAVCC = 2.5V, FBUS =100 kHz, CB = 100 pF D10 ICCWRITE Write Operating 5 mAVCC =5.5V Current 3 mAVCC =2.5V D11 Iccs Standby Current 1 A VCC =5.5V, TA=85C D12 ICCI Idle Mode Current 50 A VCC =5.5V Note 1: This parameter is periodically sampled and not 100% tested. 2: The SCIO output driver impedance will vary to ensure IO is not exceeded. 2008-2018 Microchip Technology Inc. DS20002122E-page 2