X-On Electronics has gained recognition as a prominent supplier of 11AA02UID-I/SN EEPROM across the USA, India, Europe, Australia, and various other global locations. 11AA02UID-I/SN EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

11AA02UID-I/SN Microchip

11AA02UID-I/SN electronic component of Microchip
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Part No.11AA02UID-I/SN
Manufacturer: Microchip
Category: EEPROM
Description: Microchip Technology EEPROM 2K UNIO EE Unique ID Upper Quarter SW
Datasheet: 11AA02UID-I/SN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
900: USD 0.5759 ea
Line Total: USD 518.31 
Availability - 0
MOQ: 900  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 100
Multiples : 100
100 : USD 0.5218
200 : USD 0.5307
400 : USD 0.5195
800 : USD 0.5098

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 900
Multiples : 100
900 : USD 0.5759
1000 : USD 0.5702
2000 : USD 0.5645
2500 : USD 0.5589
3000 : USD 0.5533
4000 : USD 0.5477
5000 : USD 0.5422
10000 : USD 0.5368
20000 : USD 0.5314
50000 : USD 0.5261

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.46
25 : USD 0.4497
100 : USD 0.4382

   
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We are delighted to provide the 11AA02UID-I/SN from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 11AA02UID-I/SN and other electronic components in the EEPROM category and beyond.

Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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11AA02UID 2K UNI/O Serial EEPROM with Unique 32-Bit Serial Number DEVICE SELECTION TABLE Density Page Size Temp. Unique ID Part Number VCC Range Packages (bits) (Bytes) Ranges Length SN, TT 32-Bit 11AA02UID 2K 1.8-5.5V 16 I Features: Description: Preprogrammed 32-Bit Serial Number: The Microchip Technology Inc. 11AA02UID device is a 2 Kbit Serial Electrically Erasable PROM with a - Unique across all UID-family EEPROMs preprogrammed, 32-bit unique ID. The device is - Scalable to 48-bit, 64-bit, 128-bit, 256-bit, organized in blocks of x8-bit memory and support the and other lengths patented* single I/O UNI/O serial bus. By using Single I/O, UNI/O Serial Interface Bus Manchester encoding techniques, the clock and data Low-Power CMOS Technology: are combined into a single, serial bit stream (SCIO), - 1 mA active current, typical where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. - 1 A standby current (max.) 256 x 8 Bit Organization Low-voltage design permits operation down to 1.8V, Schmitt Trigger Inputs for Noise Suppression with standby and active currents of only 1 uA and 1 mA, respectively. Output Slope Control to Eliminate Ground Bounce The 11AA02UID is available in standard 8-lead SOIC 100 kbps Max. Bit Rate Equivalent to 100 kHz and 3-lead SOT-23 packages. Clock Frequency Self-Timed Write Cycle (including Auto-Erase) Package Types (not to scale) Page-Write Buffer for up to 16 Bytes STATUS Register for Added Control: SOIC SOT23 - Write enable latch bit (SN) (TT) - Write-In-Progress bit 2 VCC NC 1 8 VCC Block Write Protection: NC 2 7 NC VSS 3 - Protect none, 1/4, 1/2 or all of array 3 6 NC NC 1 SCIO VSS 4 5 SCIO Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch High Reliability: Pin Function Table - Endurance: 1,000,000 erase/write cycles Name Function - Data retention: > 200 years SCIO Serial Clock, Data Input/Output - ESD protection: > 4,000V VSS Ground 3-Lead SOT-23 and 8-Lead SOIC Packages VCC Supply Voltage RoHS Compliant Available Temperature Ranges: - Industrial (I): -40C to +85C * Microchips UNI/O Bus products are covered by the following patents issued in the U.S.A.: 7,376,020 and 7,788,430. 2013 Microchip Technology Inc. DS20005206A-page 111AA02UID 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SCIO w.r.t. VSS.................................................................................................................................... -0.6V to VCC+1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias.................................................................................................................-40C to 85C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): VCC = 2.5V to 5.5V TA = -40C to +85C VCC = 1.8V to 2.5V TA = -20C to +85C Param. Sym. Characteristic Min. Max. Units Test Conditions No. IH High-level Input 0.7*VCC VCC+1 V D1 V Voltage D2 VIL Low-level Input -0.3 0.3*VCC V VCC 2.5V Voltage -0.3 0.2*VCC V VCC < 2.5V D3 VHYS Hysteresis of Schmitt 0.05*Vcc V VCC 2.5V (Note 1) Trigger inputs (SCIO) D4 VOH High-level Output VCC -0.5 V IOH = -300 A, VCC = 5.5V Voltage VCC -0.5 V IOH = -200 A, Vcc = 2.5V D5 VOL Low-level Output 0.4 V IOI = 300 A, VCC = 5.5V Voltage 0.4 V IOI = 200 A, Vcc = 2.5V D6 IO Output Current Limit 4 mA VCC = 5.5V (Note 1) (Note 2) 3 mA Vcc = 2.5V (Note 1) LI Input Leakage 1 AVIN = VSS or VCC D7 I Current (SCIO) D8 CINT Internal Capacitance 7 pFTA = 25C, FCLK = 1 MHz, (all inputs and VCC = 5.0V (Note 1) outputs) D9 ICC Read Read Operating 3 mA VCC=5.5V, FBUS=100 kHz, CB=100 pF Current 1 mA VCC=2.5V, FBUS=100 kHz, CB=100 pF D10 ICC Write Write Operating 5 mA VCC = 5.5V Current 3 mA VCC = 2.5V D11 Iccs Standby Current 1 AVCC = 5.5V, TA = 85C D12 ICCI Idle Mode Current 50 AVCC = 5.5V Note 1: This parameter is periodically sampled and not 100% tested. 2: The SCIO output driver impedance will vary to ensure IO is not exceeded. DS20005206A-page 2 2013 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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