X-On Electronics has gained recognition as a prominent supplier of 1N3768JANTX across the USA, India, Europe, Australia, and various other global locations. 1N3768JANTX are a product manufactured by Microchip. We provide cost-effective solutions for 1N3768JANTX, ensuring timely deliveries around the world.

1N3768JANTX Microchip

1N3768JANTX electronic component of Microchip
1N3768JANTX Microchip
1N3768JANTX Unclassified
1N3768JANTX

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Part No. 1N3768JANTX
Manufacturer: Microchip
Category: Unclassified
Description: Diode Switching 1KV 35A 2-Pin DO-5
Datasheet: 1N3768JANTX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 32.0415 ea
Line Total: USD 64.08 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2
Multiples : 1
2 : USD 32.0415

   
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RoHS - XON
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We are delighted to provide the 1N3768JANTX from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N3768JANTX and other electronic components in the Microchip manufacturer and beyond.

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1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) Qualified Levels: JAN, JANTX, and High Reliability Silicon Power Rectifier Available on JANTXV commercial Qualified per MIL-PRF-19500/297 versions DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high reliability applications. They are constructed with glass passivated die and feature glass to metal seal construction. They have a 500 amp surge rating and provide a V up to 1000 RWM volts. Important: For the latest information, visit our website 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) MECHANICAL and PACKAGING CASE: Hermetically sealed metal and glass case body. TERMINALS: Hot solder dip (Sn63/Pb37) on standard commercial, JAN, JANTX, and JANTXV levels. RoHS compliant matte-tin on nickel is available on commercial grade only. MARKING: Polarity symbol and part number. POLARITY: Standard polarity devices are cathode to stud. Reverse polarity devices are anode to stud. WEIGHT: Approximately 14 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N1184 R e3 Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (available JANTX = JANTX level on commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial Polarity JEDEC type number R = Anode to Stud (see Electrical Blank = Cathode to Stud Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Forward Current: The forward current dc value, no alternating component. F I Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current. FSM Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input I O and a 180 degree conduction angle. I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. T4-LDS-0138, Rev. 2 (121993) 2013 Microsemi Corporation Page 2 of 6

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