X-On Electronics has gained recognition as a prominent supplier of 1N5417USJANTXV across the USA, India, Europe, Australia, and various other global locations. 1N5417USJANTXV are a product manufactured by Microchip. We provide cost-effective solutions for 1N5417USJANTXV, ensuring timely deliveries around the world.

1N5417USJANTXV Microchip

1N5417USJANTXV electronic component of Microchip
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Part No. 1N5417USJANTXV
Manufacturer: Microchip
Category: Unclassified
Description: Diode Switching 200V 3A 2-Pin E-MELF
Datasheet: 1N5417USJANTXV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 22.698 ea
Line Total: USD 45.4 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 2
Multiples : 1
2 : USD 22.698

   
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RoHS - XON
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We are delighted to provide the 1N5417USJANTXV from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5417USJANTXV and other electronic components in the Microchip manufacturer and beyond.

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1N5415US thru 1N5420US Qualified Levels: VOIDLESS-HERMETICALLY SEALED SURFACE JAN, JANTX, JANTXV Available on MOUNT FAST RECOVERY GLASS RECTIFIERS and JANS commercial versions Qualified per MIL-PRF-19500/411 DESCRIPTION This fast recovery rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal Category 1 metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website 1N5415US thru 1N5420US MAXIMUM RATINGS o o o Notes: 1. Derate linearly at 22 mA/ C for 55 C < T < 100 C. A o o o 2. Above T = 100 C, derate linearly at 26.7 mA/ C to zero at T = 175 C. A A 3. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(max) o does not exceed 175 C. MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps are copper with tin/lead (Sn/Pb) finish. Note: Previous inventory had solid silver with tin/lead (Sn/Pb) finish. RoHS compliant matte-tin is available for commercial grade only. MARKING: Cathode band only. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Contact factory for quantities. WEIGHT: 539 milligrams. See Package Dimensions and recommended Pad Layout on last page. PART NOMENCLATURE JAN 1N5415 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = commercial MELF Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. T4-LDS-0231-1, Rev. 1 (111902) 2011 Microsemi Corporation Page 2 of 5

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