X-On Electronics has gained recognition as a prominent supplier of 1N6464 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. 1N6464 ESD Suppressors / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

1N6464 Microchip

1N6464 electronic component of Microchip
1N6464 Microchip
1N6464 ESD Suppressors / TVS Diodes
1N6464  Circuit Protection

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See Product Specifications
Part No. 1N6464
Manufacturer: Microchip
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor
Datasheet: 1N6464 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 14.7706 ea
Line Total: USD 59.08 
Availability - 35
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
35
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 4
Multiples : 1
4 : USD 14.7706
100 : USD 11.69

35
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 5
Multiples : 1
5 : USD 12.3682
100 : USD 11.7263

   
Manufacturer
Product Category
RoHS - XON
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Hts Code
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Factory Pack Quantity :
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We are delighted to provide the 1N6464 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N6464 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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1N6461 1N6468 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/551 DESCRIPTION This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak standoff voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website 1N6461 1N6468 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only. MARKING: Body paint and part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Contact factory for quantities. WEIGHT: Approximately 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6461 e3 Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant CDS (reference JANS) Blank = commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage V WM that may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C T4-LDS-0286, Rev. 1 (4/24/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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SILICON STORAGE TECHNOLOGY
Supertex
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VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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