1PMT33AT1G ON Semiconductor

1PMT5.0AT1G/T3G Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT1G/T3G Series is designed to protect voltage sensitive components from high voltage, high energy transients. 1PMT5.0AT1G/T3G Series MAXIMUM RATINGS Rating Symbol Value Unit Maximum P Dissipation, (PW10/1000 s) (Note 1) (1PMT5.0A 1PMT36A) P 200 W pk pk Maximum P Dissipation, (PW10/1000 s) (Note 1) (1PMT40A 1PMT58A) P 175 W pk pk Maximum P Dissipation, (PW8/20 s) (Note 1) P 1000 W pk pk DC Power Dissipation @ T = 25C (Note 2) P 500 mW A D Derate above 25C 4.0 mW/C Thermal Resistance, JunctiontoAmbient R 248 C/W JA Thermal Resistance, JunctiontoLead (Anode) R 35 C/W  Janode Maximum DC Power Dissipation (Note 3) P 3.2 W D Thermal Resistance, JunctiontoTab (Cathode) R 23 C/W Jcathode Operating and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse at T = 25C. A 2. Mounted with recommended minimum pad size, DC board FR4. 3. At Tab (Cathode) temperature, T = 75C tab ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 3.5 V Max. @ I (Note 4) = 35 A) F F I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage @ I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current @ V I R RWM T V Breakdown Voltage @ I BR T I Test Current T I Forward Current F I PP V Forward Voltage @ I F F UniDirectional TVS