1PMT5935BT1G ON Semiconductor

1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its www.onsemi.com unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in PLASTIC SURFACE MOUNT footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use 3.2 WATT ZENER DIODES in cellular phones, portable devices, business machines and many 6.2 47 VOLTS other industrial/consumer applications. Features 12 Zener Breakdown Voltage: 6.2 47 V 1: CATHODE DC Power Dissipation: 3.2 W with Tab 1 (Cathode) 75C 2: ANODE Low Leakage < 5 A ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile Maximum Height of 1.1 mm 1 Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment 2 2 Small Footprint Footprint Area of 8.45 mm POWERMITE CASE 457 Supplied in 12 mm Tape and Reel Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes POWERMITE is JEDEC Registered as DO216AA MARKING DIAGRAM Cathode Indicated by Polarity Band These Devices are PbFree and are RoHS Compliant M 1 xxB 2 Mechanical Characteristics CATHODE ANODE CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are M = Date Code readily solderable xxB = Specific Device Code MOUNTING POSITION: Any (See Table on Page 2) MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: =PbFree Package 260C for 10 Seconds ORDERING INFORMATION Device Package Shipping 1PMT59xxBT1G POWERMITE 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: December, 2018 Rev. 5 1PMT5920B/D1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit DC Power Dissipation T = 25C (Note 1) P 500 mW A D Derate above 25C 4.0 mW/C Thermal Resistance, JunctiontoAmbient R 248 C/W JA Thermal Resistance, JunctiontoLead (Anode) R 35 C/W Janode Maximum DC Power Dissipation (Note 2) P 3.2 W D Thermal Resistance from JunctiontoTab (Cathode) 23 C/W R Jcathode Operating and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with recommended minimum pad size, PC board FR4. 2. At Tab (Cathode) temperature, T = 75C tab ELECTRICAL CHARACTERISTICS (T = 25C unless L I otherwise noted, V = 1.5 V Max. I = 200 mAdc for all types) F F I F Symbol Parameter V Reverse Zener Voltage I Z ZT I Reverse Current ZT V V Z Maximum Zener Impedance I Z R ZT ZT V I V R F I Reverse Current I ZK ZT Z Maximum Zener Impedance I ZK ZK I Reverse Leakage Current V R R V Reverse Voltage R I Forward Current F Zener Voltage Regulator V Forward Voltage I F F ELECTRICAL CHARACTERISTICS (T = 30C unless otherwise noted, V = 1.25 Volts 200 mA) L F Zener Voltage (Note 3) Z I Z I ZT ZT ZK ZK V I (Volts) (Note 4) (Note 4) I I V V I Z ZT ZT R R R ZK Device Marking Min Nom Max (mA) ( A) (V) ( ) ( ) (mA) Device* 1PMT5920BT1G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1PMT5921BT1G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1PMT5924BT1G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1PMT5927BT1G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1PMT5929BT1G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5933BT1G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5941BT1G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25C. 4. Zener Impedance Derivation Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The ZT ZK specified limits are for I (ac) = 0.1 I (dc) with the ac frequency = 60 Hz. Z Z www.onsemi.com 2