1N8149US/TR Microchip

1N8149US 1N8182US Voidless-Hermetically-Sealed Unidirectional 150 W Available Low-Capacitance Transient Voltage Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak standoff voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard- glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability A SQ-MELF applications. These devices are also available in axial leaded packages for thru-hole mounting. Package Important: For the latest information, visit our website 1N8149US 1N8182US MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps feature tin/lead or RoHS compliant matte/tin plating over copper. MARKING: None POLARITY: Cathode band MOUNTING: Any position TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 539 milligrams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N8149 US (e3) Reliability Level RoHS Compliance MQ (reference JAN) e3 = RoHS compliant MX (reference JANTX) Blank = non-RoHS compliant MV (reference JANTXV) MS (reference JANS) MELF Surface Mount Blank = Commercial Type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D I Breakdown Current: The current used for measuring Breakdown Voltage V (BR) (BR) Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. C T V Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction. WIB I Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (V ). IB WIB T4-LDS-xxxx, Rev x (10-02-14) 2013 Microsemi Corporation Page 2 of 6