24VL024H/SN Microchip

24VL024H 2 2K I C Serial EEPROM with Half-Array Write-Protect Device Selection Table Description: Part Number VCC Range Max. Clock The Microchip Technology Inc. 24VL024H is a 2 Kbit Serial Electrically Erasable PROM with operation (1) 24VL024H 1.5 to 3.6V 400 kHz down to 1.5V. The device is organized as a single block of 256 x 8-bit memory with a 2-wire serial interface. Note 1: 100 kHz for VCC < 1.8V Low-current design permits operation with typical standby and active currents of only 1 A and 400 A, Features: respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow Single-Supply with Operation down to 1.5V the connection of up to eight 24VL024H devices on the Low-Power CMOS Technology: same bus for up to 16 Kbits of contiguous EEPROM - 400 A active current, maximum memory. The device is available in the standard 8-pin -1 A standby current, maximum PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and 2 2-Wire Serial Interface Bus, I C Compatible MSOP packages. Schmitt Trigger Inputs for Noise Suppression Block Diagram Output Slope Control to eliminate Ground Bounce 100 kHz and 400 kHz Compatibility WP A0 A1 A2 HV Generator Page Write Buffer for up to 16 Bytes Self-Timed Write Cycle (including Auto-Erase) I/O Memory Hardware Write Protection for Half Array Control Control EEPROM (80h-FFh) Logic XDEC Logic Array Cascadable up to Eight Devices More than 1 Million Erase/Write Cycles SDA SCL ESD Protection > 4,000V Write-Protect Data Retention > 200 Years Circuitry VCC Factory Programming (QTP) Available YDEC VSS 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP Sense Amp. Packages R/W Control Temperature Range: - -20C to +85C Pb-Free and RoHS compliant Package Types PDIP, MSOP SOIC, TSSOP A0 1 8 VCC 1 8 A0 VCC A1 2 7 WP 2 7 A1 WP A2 3 6 SCL 3 6 A2 SCL VSS 4 5 SDA 4 5 VSS SDA TDFN A0 1 8 VCC 7 WP A1 2 SCL 6 A2 3 VSS 4 5 SDA 2008 Microchip Technology Inc. DS22109A-page 124VL024H 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied..................................................................................................-20C to +85C ESD protection on all pins .................................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS VCC = +1.5V to 3.6V TA = -20C to +85C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, A2, SCL, SDA and WP pins: D2 VIH High-level input voltage 0.7 VCC V D3 VIL Low-level input voltage 0.3 VCC V D4 VHYS Hysteresis of Schmitt 0.05 VCC V (Note) Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 3.6V IOL = 2.1 mA VCC = 2.5V D6 ILI Input leakage current 1 AVIN = VSS or VCC, WP = VSS D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 3.6V (Note) COUT (all inputs/outputs) TA = 25C, f = 1 MHz D9 ICC Read Operating current 400 AVCC = 3.6V, SCL = 400 kHz ICC Write 3 mA VCC = 3.6V D10 ICCS Standby current 1 AVCC = 3.6V, SCL = SDA = VCC WP = VSS, A0, A1, A2 = VSS Note: This parameter is periodically sampled and not 100% tested. DS22109A-page 2 2008 Microchip Technology Inc.