X-On Electronics has gained recognition as a prominent supplier of 25A512-I/P EEPROM across the USA, India, Europe, Australia, and various other global locations. 25A512-I/P EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

25A512-I/P Microchip

25A512-I/P electronic component of Microchip
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Part No.25A512-I/P
Manufacturer: Microchip
Category: EEPROM
Description: Memory; EEPROM; SPI; 64kx8bit; 1.7÷3V; 10MHz; DIP8
Datasheet: 25A512-I/P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.244 ea
Line Total: USD 2.24 
Availability - 343
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
343
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.244
120 : USD 2.233

   
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We are delighted to provide the 25A512-I/P from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25A512-I/P and other electronic components in the EEPROM category and beyond.

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Microchip Technology EEPROM 512k, 64K X 8 1.8V SER EE IND
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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25A512 512 Kbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25A512 1.7-3.0V 128 Byte I SN, ST Features: Description: 10 MHz max. Clock Speed The Microchip Technology Inc. 25A512 is a 512 Kbit Byte and Page-level Write Operations serial EEPROM memory with byte-level and page-level - 128-byte page serial EEPROM functions. It also features Page, Sector -5 ms max. and Chip erase functions typically associated with - No page or sector erase required Flash-based products. These functions are not required Low-Power CMOS Technology for byte or page write operations. The memory is - Max. Write Current: 5 mA at 3.0V, 10 MHz accessed via a simple Serial Peripheral Interface (SPI) - Read Current: 10 mA at 3.0V, 10 MHz compatible serial bus. The bus signals required are a - Standby Current: 1 A at 2.5V (Deep power- clock input (SCK) plus separate data in (SI) and data down) out (SO) lines. Access to the device is controlled by a Electronic Signature for Device ID Chip Select (CS) input. Self-Timed Erase and Write cycles Communication to the device can be paused via the - Page Erase (5 ms, typical) ). While the device is paused, transi- hold pin (HOLD - Sector Erase (10 ms/sector, typical) tions on its inputs will be ignored, with the exception of - Bulk Erase (10 ms, typical) Chip Select, allowing the host to service higher priority Sector Write Protection (16K byte/sector) interrupts. - Protect none, 1/4, 1/2 or all of array The 25A512 is available in standard packages includ- Built-In Write Protection ing 8-lead SOIC and TSSOP packages. All packages - Power-on/off data protection circuitry are Pb-free and RoHS compliant. - Write enable latch - Write-protect pin Package Types (not to scale) High Reliability - Endurance: 1 Million erase/write cycles - Data Retention: >200 years SOIC/TSSOP - ESD Protection: 4000V (SN, ST) Temperature Ranges Supported CS 1 8 VCC - Industrial (I): -40C to +85C SO 2 7 HOLD Pb-free and RoHS Compliant 3 WP 6 SCK VSS 4 5 SI Pin Function Table Name Function CS Chip Select Input SO Serial Data Output WP Write-Protect VSS Ground SI Serial Data Input SCK Serial Clock Input HOLD Hold Input VCC Supply Voltage 2010-2011 Microchip Technology Inc. Preliminary DS22237C-page 1 25A51225A512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................4.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.7V to 3.0V Param. Sym. Characteristic Min. Max. Units Test Conditions No. IH1 High-level input .7 VCC VCC +.3 V D001 V voltage D002 VIL1 Low-level input -0.3 0.3 VCC VVCC 2.7V voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL Low-level output 0.4 VIOL = 2.1 mA, VCC 1.8V voltage D005 VOL 0.2 VIOL = 1.0 mA, VCC < 1.8V D006 VOH High-level output VCC -0.2 V IOH = -400 A voltage D007 ILI Input leakage current 1 ACS = VCC, VIN = VSS TO VCC D008 ILO Output leakage 1 ACS = VCC, VOUT = VSS TO VCC current D009 CINT Internal capacitance A = 25C, CLK = 1.0 MHz, 7 pFT (all inputs and VCC = 3.0V (Note) outputs) D010 ICC Read 8 mA VCC = 3.0V FCLK = 10.0 MHz SO = Open Operating current 5 mA VCC = 2.5V FCLK = 10.0 MHz SO = Open D011 ICC Write 6 mA VCC = 3.0V 5 mA VCC = 2.5V D012 ICCS Standby current 10 ACS = VCC = 3.0V, Inputs tied to VCC or VSS, 85C D13 ICCSPD Deep power-down 1 ACS = VCC = 2.5V, Inputs tied to VCC or current VSS, 85C Note: This parameter is periodically sampled and not 100% tested. DS22237C-page 2 Preliminary 2010-2011 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ATM
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