X-On Electronics has gained recognition as a prominent supplier of 25LC512T-ESN EEPROM across the USA, India, Europe, Australia, and various other global locations. 25LC512T-ESN EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

25LC512T-ESN Microchip

25LC512T-ESN electronic component of Microchip
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Part No.25LC512T-ESN
Manufacturer: Microchip
Category: EEPROM
Description: Microchip Technology EEPROM 512k 64KX8 2.5V SER EE EXT
Datasheet: 25LC512T-ESN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.574 ea
Line Total: USD 2.57 
Availability - 4850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3201
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 10
10 : USD 3.25
250 : USD 2.725
500 : USD 2.6875
825 : USD 2.65
1650 : USD 2.6125
2475 : USD 2.575
3300 : USD 2.5375

3022
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8246
10 : USD 3.7661
25 : USD 3.7076
100 : USD 3.6504
250 : USD 3.5919
500 : USD 3.5334
1000 : USD 3.4762
3000 : USD 3.4177

9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 7.1914
10 : USD 6.3041
30 : USD 5.7642
100 : USD 5.311

4850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.574
100 : USD 2.508
500 : USD 2.475

3201
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 10
20 : USD 3.9764
250 : USD 3.3341
500 : USD 3.2882
830 : USD 3.2424
1650 : USD 3.1964

3022
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 3.8246
10 : USD 3.7661
25 : USD 3.7076
100 : USD 3.6504
250 : USD 3.5919
500 : USD 3.5334
1000 : USD 3.4762
3000 : USD 3.4177

   
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We are delighted to provide the 25LC512T-ESN from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25LC512T-ESN and other electronic components in the EEPROM category and beyond.

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25LC512 512 Kbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC512 2.5-5.5V 128 Byte I,E P, SN, SM, MF Features Description 20 MHz max. Clock Speed The Microchip Technology Inc. 25LC512 is a 512 Kbit Byte and Page-level Write Operations: serial EEPROM memory with byte-level and page-level - 128-byte page serial EEPROM functions. It also features Page, Sector - 5 ms max. and Chip erase functions typically associated with - No page or sector erase required Flash-based products. These functions are not required Low-Power CMOS Technology: for byte or page write operations. The memory is - Max. Write Current: 5 mA at 5.5V, 20 MHz accessed via a simple Serial Peripheral Interface (SPI) - Read Current: 10 mA at 5.5V, 20 MHz compatible serial bus. The bus signals required are a - Standby Current: 1A at 2.5V (Deep power- clock input (SCK) plus separate data in (SI) and data out down) (SO) lines. Access to the device is controlled by a Chip Electronic Signature for Device ID Select (CS) input. Self-Timed Erase and Write cycles: Communication to the device can be paused via the - Page Erase (5 ms, typical) hold pin (HOLD). While the device is paused, transi- - Sector Erase (10 ms/sector, typical) tions on its inputs will be ignored, with the exception of - Bulk Erase (10 ms, typical) Chip Select, allowing the host to service higher priority Sector Write Protection (16K byte/sector): interrupts. - Protect none, 1/4, 1/2 or all of array Packages Built-In Write Protection: 8-Lead DFN-S, 8-Lead PDIP, 8-Lead SOIC and - Power-on/off data protection circuitry 8-Lead SOIJ - Write enable latch - Write-protect pin High Reliability: Package Types (not to scale) - Endurance: 1 Million erase/write cycles - Data Retention: >200 years DFN-S PDIP/SOIC/SOIJ (MF) (P, SN, SM) - ESD Protection: >4000V 1 CS 8 VCC Temperature Ranges Supported: CS 1 8 VCC 2 - Industrial (I): -40Cto +85C SO 7 HOLD SO 2 7 HOLD - Extended (E): -40C to +125C 3 WP 6 SCK 3 6 WP SCK RoHS Compliant VSS SI 4 4 5 VSS 5 SI Automotive AEC-Q100 Qualified Pin Function Table Name Function CS Chip Select Input SO Serial Data Output WP Write-Protect VSS Ground SI Serial Data Input SCK Serial Clock Input HOLD Hold Input VCC Supply Voltage 2007-2021 Microchip Technology Inc. DS20002065D-page 1 25LC512 25LC51225LC512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ..........................................................................................................-0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins.......................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 2.5V to 5.5V Extended (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 0.7 x VCC VCC + 1 V voltage D002 VIL1 Low-level input -0.3 0.3 x VCC VVCC2.7V voltage D003 VIL2 -0.3 0.2 x VCC VVCC < 2.7V D004 VOL Low-level output 0.4 VIOL = 2.1 mA voltage D005 VOH High-level output VCC - 0.2 V IOH = -400 A voltage D006 ILI Input leakage current 1 ACS = VCC, VIN = VSS or VCC D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS or VCC current D008 CINT Internal capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D009 ICC Read 10 mA VCC = 5.5V FCLK = 20.0 MHz SO = Open CC = 2.5V FCLK = 10.0 MHz Operating current 5 mA V SO = Open D010 ICC Write 7 mA VCC = 5.5V 5 mA VCC = 2.5V CCS 20 A CS = VCC = 5.5V, Inputs tied to VCC or D011 I Standby current VSS, 125C 10 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, 85C CCSPD Deep power-down 2 A CS = VCC = 2.5V, Inputs tied to VCC or D012 I current VSS, 125C 1 A CS = VCC = 2.5V, Inputs tied to VCC or VSS, 85C Note: This parameter is periodically sampled and not 100% tested. 2007-2021 Microchip Technology Inc. DS20002065D-page 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
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MICREL SEMICONDUCTOR
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MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
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Microchip / Microsemi
Microchip / Vectron
Microchip Tech
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Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
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ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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