25LC512T-I/MF Microchip

25LC512 512 Kbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC512 2.5-5.5V 128 Byte I,E P, SN, SM, MF Features: Description: 20 MHz max. Clock Speed The Microchip Technology Inc. 25LC512 is a 512 Kbit Byte and Page-level Write Operations: serial EEPROM memory with byte-level and page-level - 128-byte page serial EEPROM functions. It also features Page, Sector -5 ms max. and Chip erase functions typically associated with - No page or sector erase required Flash-based products. These functions are not required Low-Power CMOS Technology: for byte or page write operations. The memory is - Max. Write Current: 5 mA at 5.5V, 20 MHz accessed via a simple Serial Peripheral Interface (SPI) - Read Current: 10 mA at 5.5V, 20 MHz compatible serial bus. The bus signals required are a - Standby Current: 1 A at 2.5V (Deep power- clock input (SCK) plus separate data in (SI) and data out down) (SO) lines. Access to the device is controlled by a Chip Electronic Signature for Device ID Select (CS) input. Self-Timed Erase and Write cycles: Communication to the device can be paused via the - Page Erase (5 ms, typical) ). While the device is paused, transi- hold pin (HOLD - Sector Erase (10 ms/sector, typical) tions on its inputs will be ignored, with the exception of - Bulk Erase (10 ms, typical) Chip Select, allowing the host to service higher priority Sector Write Protection (16K byte/sector): interrupts. - Protect none, 1/4, 1/2 or all of array The 25LC512 is available in standard packages includ- Built-In Write Protection: ing 8-lead PDIP, SOIC, and advanced 8-lead DFN - Power-on/off data protection circuitry package. All packages are Pb-free and RoHS - Write enable latch compliant. - Write-protect pin High Reliability: Package Types (not to scale) - Endurance: 1 Million erase/write cycles - Data Retention: >200 years DFN PDIP/SOIC/SOIJ - ESD Protection: >4000V (MF) (P, SN, SM) Temperature Ranges Supported: 1 CS 8 VCC CS 1 8 VCC - Industrial (I): -40Cto +85C 2 SO 7 HOLD SO 2 7 HOLD - Automotive (E): -40C to +125C 3 WP 6 SCK WP 3 6 SCK Pb-free and RoHS Compliant VSS 4 5 SI VSS 4 5 SI Pin Function Table Name Function CS Chip Select Input SO Serial Data Output WP Write-Protect VSS Ground SI Serial Data Input SCK Serial Clock Input HOLD Hold Input VCC Supply Voltage 2010 Microchip Technology Inc. DS22065C-page 1 25LC512 25LC51225LC512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 2.5V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input .7 VCC VCC +1 V voltage D002 VIL1 Low-level input -0.3 0.3 VCC VVCC 2.7V voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL Low-level output 0.4 VIOL = 2.1 mA voltage D005 VOH High-level output VCC -0.2 V IOH = -400 A voltage D006 ILI Input leakage current 1 ACS = VCC, VIN = VSS or VCC D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS or VCC current D008 CINT Internal capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D009 ICC Read 10 mA VCC = 5.5V FCLK = 20.0 MHz SO = Open Operating current 5 mA VCC = 2.5V FCLK = 10.0 MHz SO = Open D010 ICC Write 7 mA VCC = 5.5V 5 mA VCC = 2.5V D011 ICCS 20 A CS = VCC = 5.5V, Inputs tied to VCC or Standby current VSS, 125C 10 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, 85C D012 ICCSPD Deep power-down 2 A CS = VCC = 2.5V, Inputs tied to VCC or current VSS, 125C 1 A CS = VCC = 2.5V, Inputs tied to VCC or VSS, 85C Note: This parameter is periodically sampled and not 100% tested. DS22065C-page 2 2010 Microchip Technology Inc.