X-On Electronics has gained recognition as a prominent supplier of 93C66B-I/SN EEPROM across the USA, India, Europe, Australia, and various other global locations. 93C66B-I/SN EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

93C66B-I/SN Microchip

93C66B-I/SN electronic component of Microchip
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Part No.93C66B-I/SN
Manufacturer: Microchip
Category: EEPROM
Description: Memory; EEPROM; Microwire; 256x16bit; 4.5÷5.5V; 2MHz; SO8
Datasheet: 93C66B-I/SN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
160: USD 0.1074 ea
Line Total: USD 17.18 
Availability - 155
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 160  Multiples: 1
Pack Size: 1
Availability Price Quantity
155
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 160
Multiples : 1
160 : USD 0.1074

7806
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.33

281
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 3
Multiples : 1
3 : USD 0.896
10 : USD 0.8106
25 : USD 0.7728
59 : USD 0.7658
100 : USD 0.7364

   
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We are delighted to provide the 93C66B-I/SN from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 93C66B-I/SN and other electronic components in the EEPROM category and beyond.

Image Part-Description
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 4K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin Word Size Temp Ranges Packages 93AA66A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT 93AA66B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT 93LC66A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT 93LC66B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT 93C66A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT 93C66B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT 93AA66C 1.8-5.5 Yes 8 or 16-bit I P, SN, ST, MS 93LC66C 2.5-5.5 Yes 8 or 16-bit I, E P, SN, ST, MS 93C66C 4.5-5.5 Yes 8 or 16-bit I, E P, SN, ST, MS Features Description Low-power CMOS technology The Microchip Technology Inc. 93XX66A/B/C devices are 4K bit low voltage serial Electrically Erasable ORG pin to select word size for 66C version PROMs (EEPROM). Word-selectable devices such as 512 x 8-bit organization A ver. devices (no ORG) the 93AA66C, 93LC66C or 93C66C are dependent 256 x 16-bit organization B ver. devices (no upon external logic levels driving the ORG pin to set ORG) word size. For dedicated 8-bit communication, the Self-timed ERASE/WRITE cycles (including 93AA66A, 93LC66A or 93C66A devices are available, auto-erase) while the 93AA66B, 93LC66B and 93C66B devices Automatic ERAL before WRAL provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low Power on/off data protection circuitry power, non-volatile memory applications. The entire Industry standard 3-wire serial I/O 93XX Series is available in standard packages includ- Device Status signal (READY/BUSY ) ing 8-lead PDIP and SOIC, and advanced packaging Sequential READ function including 8-lead MSOP, 6-lead SOT-23, and 8-lead 1,000,000 E/W cycles TSSOP. Pb-free (Pure Matte Sn) finish is also Data retention > 200 years available. Temperature ranges supported: Package Types (not to scale) - Industrial (I) -40C to +85C ROTATED SOIC PDIP/SOIC - Automotive (E) -40C to +125C (ex: 93LC66BX) (P, SN) Pin Function Table NC 1 8 ORG* CS 1 8 VCC VCC 2 7 VSS CLK 2 7 NC Name Function CS 3 6 DO DI 3 6 ORG* CS Chip Select CLK 4 5 DI DO 4 5 VSS CLK Serial Data Clock TSSOP/MSOP SOT-23 (ST, MS) DI Serial Data Input (OT) DO Serial Data Output 1 8 CS VCC 1 6 DO VCC 2 7 CLK NC 3 6 DI ORG* 2 5 VSS Ground VSS CS 5 4 DO VSS 3 4 DI CLK NC No internal connection * ORG pin is NC on A/B devices ORG Memory Configuration VCC Power Supply 2003 Microchip Technology Inc. DS21795B-page 193AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS VCC = range by device (see Table on Page 1) All parameters apply over the specified Industrial (I): TA = -40C to +85C ranges unless otherwise noted. Automotive (E): TA = -40C to +125C Param. Symbol Parameter Min Typ Max Units Conditions No. D1 VIH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS to VCC D6 ILO Output leakage current 1 AVOUT = VSS to VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 2 mA FCLK = 3 MHz, Vcc = 5.5V 500 A FCLK = 2 MHz, Vcc = 2.5V CC read Read current CLK = 3 MHz, VCC = 5.5V D9 I 1 mA F 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = Cs = 0V ORG = DI = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect 93AA66A/B/C, 93LC66A/B/C 1.5V V (Note 1) 93C66A/B/C 3.8V V Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG pin not available on A or B versions. 3: READY/BUSY status must be cleared from DO, see Section 3.4Data Out (DO. DS21795B-page 2 2003 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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